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参数资料
| 型号： | SBG8100 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 8 A, 100 V, SILICON, RECTIFIER DIODE |
| 封装： | PLASTIC, D2PAK-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 31K |
| 代理商： | SBG8100 |
NEW
PRODUCT
DS30131 Rev. 1P-1
1 of 2
SBG870-SBG8100
SBG870 - SBG8100
8.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features
Case: D2PAK, Molded Plastic
Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 1.7 grams (approx.)
Marking: Type Number
Mechanical Data
Schottky Barrier Chip
Guard Ring for Transient Protection
Low Power Loss, High Efficiency
High Current Capability, Low VF
High Surge Capability
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. 300
s pulse width, 2% duty cycle.
3. Measured at VR = 4.0V and f = 1.0MHz
B
C
D
E
G
H
J
K
L
M
A
12
3
4
PIN 1
PIN 3
PIN2&4
D2PAK
Dim
Min
Max
A
9.65
10.69
B
14.60
15.88
C
0.51
1.14
D
2.29
2.79
E
4.37
4.83
G
1.14
1.40
H
1.14
1.40
J
8.25
9.25
K
0.30
0.64
L
2.03
2.92
M
2.29
2.79
All Dimensions in mm
Characteristic
Symbol
SBG
870
SBG
880
SBG
890
SBG
8100
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
70
80
90
100
V
RMS Reverse Voltage
VR(RMS)
49
56
63
70
V
Average Rectified Output Current
(Note 1)
@ TC = 110
°C
IO
8.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
175
A
Forward Voltage (Note 2)
@ IF = 8.0A, TC = 25
°C
VFM
0.85
V
Peak Reverse Current
@TC = 25
°C
at Rated DC Blocking Voltage
@ TC = 125
°C
IRM
0.1
100
mA
Typical Junction Capacitance (Note 3)
Cj
200
pF
Typical Thermal Resistance Junction to Case
RθJL
3.0
K/W
Voltage Rate of Change
dV/dt
10000
V/
s
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
POWER SEMICONDUCTOR
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