参数资料
型号: SBG8100
厂商: LITE-ON SEMICONDUCTOR CORP
元件分类: 参考电压二极管
英文描述: 8 A, 100 V, SILICON, RECTIFIER DIODE
封装: PLASTIC, D2PAK-3
文件页数: 2/2页
文件大小: 31K
代理商: SBG8100
NEW
PRODUCT
DS30131 Rev. 1P-1
2 of 2
SBG870-SBG8100
I
,
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
0.1
1.0
10
100
0
0.4
0.8
1.2
1.6
Pulse Width = 300 s
2% Duty Cycle
T = 25 C
j
°
T = 125 C
j
°
50
100
150
0
200
250
300
1
10
100
I
,
PEAK
FOR
W
ARD
SURGE
CURRENT
(A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Surge Current
8.3ms single half-sine-wave
JEDEC method
100
1000
4000
0.1
1.0
10
100
C
,
CAP
ACIT
ANCE
(pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
T = 25 C
j
°
0
4
8
2
0
50
100
150
I
,
A
VERAGE
FOR
W
ARD
CURRENT
(A)
(A
V)
T , CASE TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
C
°
6
10
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