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参数资料
| 型号： | SBL2050CT |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 整流器 |
| 英文描述： | 20 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | LEAD FREE, PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 120K |
| 代理商： | SBL2050CT |
SBL2050CT thru 2060CT
SCHOTTKY BARRIER RECTIFIER
REVERSE VOLTAGE – 50 to 60 Volts
FORWARD CURRENT – 20 Amperes
FEATURES
Metal of silicon rectifier, majority carrier conduction
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capability
Plastic package has UL flammability classification
94V-0
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
MECHANICAL DATA
Case: JEDEC TO-220AB
Polarity indicator: As marked on the body
Weight: 0.08 ounces, 2.24 grams
Terminals: Lead Free Plating
Max. mounting torque = 0.5 N.m (5.1 Kgf-cm)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMETER
SYMBOL
SBL2050CT
SBL2060CT
UNIT
Device marking code
Note
SBL2050CT
SBL2060CT
---
Maximum Repetitive Peak Reverse Voltage
VRRM
50
60
V
Maximum RMS Voltage
VRMS
35
42
V
Maximum DC Blocking Voltage
VDC
50
60
V
Average Rectified Output Current
@TC=100°C
IF
20
A
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load
IFSM
225
A
Typical Junction Capacitance per element (1)
CJ
600
PF
Storage temperature range
TSTG
-55 to +150
°C
Operating junction temperature range
TJ
-55 to +125
°C
PARAMETER
TEST CONDITIONS
SYMBOL
Min.
Max.
UNIT
Forward Voltage (2)
IF=10A
Tj=25°C
VF
---
0.75
V
Leakage Current (2)
VR=Rated
Tj=25°C
Tj=100°C
IR
---
1.0
50
mA
THERMAL CHARACTERISTIC
SYMBOL
Typical
UNIT
Typical thermal resistance _ Junction to Case (3)
RΘJC
2.0
°C/W
Note :
REV. 1, Jan-2010, KTHC81
(1)
Measured at 1.0MHz and applied reverse voltage of 4.0 VDC.
(2)
300us Pulse Width, 2% Duty Cycle.
(3)
Thermal Resistance Junction to Case.
Device mounted on L42xH25xW25mm_ black Aluminum finny heat sink.
相关PDF资料 |
PDF描述 |
|---|---|
| SBL2060PT | 20 A, 60 V, SILICON, RECTIFIER DIODE |
| SBL2035PT | 20 A, 35 V, SILICON, RECTIFIER DIODE |
| SBL25L25CT | 12.5 A, 25 V, SILICON, RECTIFIER DIODE, TO-220AB |
| SBLF25L25CT | 12.5 A, 25 V, SILICON, RECTIFIER DIODE, TO-220AB |
| SBL25L30CT | 12.5 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SBL2050PT | 功能描述:肖特基二极管与整流器 20A 50V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SBL2060 | 制造商:JSMC 制造商全称:JILIN SINO-MICROELECTRONICS CO., LTD. 功能描述:SCHOTTKY BARRIER DIODE |
| SBL2060BF | 制造商:JSMC 制造商全称:JILIN SINO-MICROELECTRONICS CO., LTD. 功能描述:SCHOTTKY BARRIER DIODE |
| SBL2060BFR | 制造商:JSMC 制造商全称:JILIN SINO-MICROELECTRONICS CO., LTD. 功能描述:SCHOTTKY BARRIER DIODE |
| SBL2060CT | 功能描述:肖特基二极管与整流器 20A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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