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参数资料
| 型号： | SBL2060PT |
| 厂商： | LITE-ON ELECTRONICS INC |
| 元件分类： | 整流器 |
| 英文描述： | 20 A, 60 V, SILICON, RECTIFIER DIODE |
| 封装： | PLASTIC, TO-3P, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 72K |
| 代理商： | SBL2060PT |
RATING AND CHARACTERISTIC CURVES
SBL2030PT thru SBL2060PT
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
IN
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
E
N
T
,(
A
)
0.2
0.3
0.7
0.8
1.0
10
100
0.4
0.5
0.6
0.1
1.0
0.9
PULSE WIDTH 300ua
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
0.1
1.0
10
100
0.1
PULSE WIDTH 300us
TJ = 25 C
SBL2030PT~ SBL2045PT
SBL2050PT ~ SBL2060PT
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
P
E
A
K
F
O
R
W
A
R
D
S
U
R
G
E
C
U
R
E
N
T
,
A
M
P
E
R
E
S
1
5
10
50
100
2
20
100
150
200
250
FIG.1 - FORWARD CURRENT DERATING CURVE
A
V
E
R
A
G
E
F
O
R
W
A
R
D
C
U
R
E
N
T
A
M
P
E
R
E
S
20
60
80
100
120
4.0
0
40
16.0
140
8.3ms Single Half-Sine-Wave
12.0
0
8.0
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
IN
S
T
A
N
T
A
N
E
O
U
S
R
E
V
E
R
S
E
C
U
R
E
N
T
,(
m
A
)
20
40
120
140
0
0.01
1.0
100
10
60
80
100
0.1
TJ = 100 C
TJ = 25 C
TJ = 75 C
FIG.5 - TYPICAL JUNCTION CAPACITANCE
C
A
P
A
C
IT
A
N
C
E
,
(p
F
)
REVERSE VOLTAGE , VOLTS
10
1
100
10000
1000
100
0.1
CASE TEMPERATURE , C
50
20.0
RESISTIVE OR
INDUCTIVE LOAD
4
TJ = 25 C, f= 1MHz
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SBL2060Z | 制造商:JSMC 制造商全称:JILIN SINO-MICROELECTRONICS CO., LTD. 功能描述:SCHOTTKY BARRIER DIODE |
| SBL2060ZR | 制造商:JSMC 制造商全称:JILIN SINO-MICROELECTRONICS CO., LTD. 功能描述:SCHOTTKY BARRIER DIODE |
| SBL2080CT | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:SCHOTTKY BARRIER RECTIFIER |
| SBL20A100 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:Voltage 100V20.0 Amp Low VF Planar MOS Barrier Schottky Rectifer |
| SBL20A100F | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:Voltage 100V 20.0Amp Low VF Planar MOS Barrier Schottky Rectifer |
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