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参数资料
| 型号： | SBL3050PT |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 整流器 |
| 英文描述： | 30 A, 50 V, SILICON, RECTIFIER DIODE |
| 封装： | PLASTIC, TO-3P, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 135K |
| 代理商： | SBL3050PT |
SBL3050PT thru 3060PT
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE – 50 to 60 Volts
FORWARD CURRENT – 30 Amperes
FEATURES
Metal of silicon rectifier, majority carrier conduction
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capability
Plastic package has UL flammability classification
94V-0
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
MECHANICAL DATA
Case: TO-3P molded plastic
Polarity: As marked on the body
Weight: 0.2 ounces, 5.6 grams
Mounting position: Any
Max. mounting torque = 0.5 N.m (5.1 Kgf-cm)
TO-3P
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMETER
SYMBOL
SBL3050PT
SBL3060PT
UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
50
60
V
Maximum RMS Voltage
VRMS
35
42
V
Maximum DC Blocking Voltage
VDC
50
60
V
Maximum Average Forward
Rectified Current
@TC=95°C
I(AV)
30
A
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load
IFSM
275
A
Maximum forward Voltage at 15.0 A DC per element
VF
0.70
V
Maximum DC Reverse Current at Rated DC
Blocking Voltage per element
@Tj=25°C
@Tj=100°C
IR
1
50
mA
Typical Junction Capacitance per element (1)
CJ
700
PF
Typical Thermal Resistance (Note 2)
RΘJC
1.5
°C/W
Operating junction temperature range
TJ
-55 to +125
°C
Storage temperature range
TSTG
-55 to +150
°C
Note :
REV. 0, Jul-2008, KTHD26
(1)
Measured at 1.0MHz and applied reverse voltage of 4.0 VDC.
(2)
Thermal Resistance Junction to Case, device mounted on L150xW150xH2mm_copper heat sink.
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PDF描述 |
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| SBL30L30CTW | 30 A, 32 V, SILICON, RECTIFIER DIODE, TO-220AB |
| SBL4030PT | 40 A, 30 V, SILICON, RECTIFIER DIODE |
| SBL4035PT | 40 A, 35 V, SILICON, RECTIFIER DIODE |
| SBL4060PT | 40 A, 60 V, SILICON, RECTIFIER DIODE |
| SBL4040PT | 40 A, 40 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SBL3060CF | 制造商:ZOWIE 制造商全称:Zowie Technology Corporation 功能描述:SCHOTTKY BARRIER RECTIFIER |
| SBL3060CT | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30A SCHOTTKY BARRIER RECTIFIER |
| SBL3060CTP | 功能描述:肖特基二极管与整流器 60V 30A RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SBL3060PT | 功能描述:肖特基二极管与整流器 30A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SBL3080CT | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:SCHOTTKY BARRIER RECTIFIER |
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