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参数资料
| 型号： | SBM4150-13 |
| 厂商： | DIODES INC |
| 元件分类： | 整流器 |
| 英文描述： | 4 A, 150 V, SILICON, RECTIFIER DIODE |
| 封装： | PLASTIC, POWERMITE3, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 73K |
| 代理商： | SBM4150-13 |
04/25/03 10:00AM
2 of 3
SBM4150
www.diodes.com
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OI
T
A
M
R
O
F
NI
E
C
N
A
V
D
A
0
1.0
2.0
3.0
5.0
4.0
0
50
100
150
175
I
,
DC
FOR
W
A
RD
CURRENT
(A)
F
T , AMBIENT TEMPERATURE (°C)
A
Fig. 3 DC Forward Current Derating
Note 2
Note 3
Note 4
Note 5
1n
10n
100n
1m
10 m
0
30
60
90
120
150
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Fig. 2 Typical Reverse Characteristics
T= +150°C
j
T= +75°C
j
T = +25°C
j
I
,
INST
ANT
A
NE
O
US
REVERSE
CURRENT
(A)
R
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 1 Typical Forward Characteristics
T = +25°C
j
T = +75°C
j
I
,
INST
ANT
ANE
O
US
F
O
R
W
ARD
CURRENT
(A)
F
T = +150°C
j
0
2
4
6
8
0
1
3
2
4
5
6
7
8
9
10
P
,
FOR
W
A
RD
POWER
D
ISSIP
A
T
ION
(W)
F
I , FORWARD CURRENT (A)
F
Fig. 4 Forward Power Dissipation
T = 175°C
j
Note 8
Note 6
Note 7
Notes:
2. TA = TSOLDERING POINT, RqJS = 2.0°C/W, RqSA = 0°C/W.
3. Device mounted on ceramic substrate, 2"x2", 2 oz. copper, single-sided, cathode pad dimensions 0.75"x1.0", anode pad
dimensions 0.25"x1.0". RqJA in range of 18-23°C/W.
4. Device mounted on FR-4 substrate, 2"x2", 2 oz. copper, single-sided, cathode pad dimensions 0.50" x 1.0", anode pad
dimensions 0.50"x1.0". RqJA in range of 30-40°C/W.
5. Device mounted on FR-4 substrate, 2"x2", 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP2001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in
range of 85-95°C/W.
6. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 3.
7. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 4.
8. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 5.
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