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参数资料
| 型号： | SBM4150-13 |
| 厂商： | DIODES INC |
| 元件分类： | 整流器 |
| 英文描述： | 4 A, 150 V, SILICON, RECTIFIER DIODE |
| 封装： | PLASTIC, POWERMITE3, 3 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 73K |
| 代理商： | SBM4150-13 |
04/25/03 10:00AM
3 of 3
SBM4150
www.diodes.com
POWERMITE is a registered trademark of Microsemi Corporation.
SBM4150 = Product type marking code
= Manufacturers’ code marking
YYWW = Date code marking
YY = Last digit of year ex: 03 for 2003
WW = Week code 01 to 52
(K) = Factory Designator
YYWW(K)
SBM4150
Marking Information
Notes:
9. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Device
Packaging
Shipping
SBM4150-13
POWERMITE
3
5000/Tape & Reel
Ordering Information (Note 9)
Notes:
2. TA = TSOLDERING POINT, RqJS = 2.0°C/W, RqSA = 0°C/W.
3. Device mounted on ceramic substrate, 2"x2", 2 oz. copper, single-sided, cathode pad dimensions 0.75"x1.0", anode pad
dimensions 0.25"x1.0". RqJA in range of 18-23°C/W.
4. Device mounted on FR-4 substrate, 2"x2", 2 oz. copper, single-sided, cathode pad dimensions 0.50" x 1.0", anode pad
dimensions 0.50"x1.0". RqJA in range of 30-40°C/W.
5. Device mounted on FR-4 substrate, 2"x2", 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP2001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in
range of 85-95°C/W.
6. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 3.
7. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 4.
8. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 5.
0
40
200
160
120
80
0
50
100
150
T
,
DERA
TED
A
MBIENT
TEMPERA
T
URE
(°C)
A
V , DC REVERSE VOLTAGE (V)
R
Fig. 5 Operating Temperature Derating
Note 5
Note 3
Note 4
N
OI
T
A
M
R
O
F
NI
E
C
N
A
V
D
A
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