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| 型号： | SBR1A40S3-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 96K |
| 描述： | DIODE SBR 40V 1A SOD323 |
| 其它图纸： | SOD-323 SOD-323 Top, Side |
| 标准包装： | 1 |
| 系列： | SBR® |
| 二极管类型： | 超级势垒 |
| 电压 - (Vr)（最大）： | 40V |
| 电流 - 平均整流 (Io)： | 1A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 550mV @ 1A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 100µA @ 40V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-76，SOD-323 |
| 供应商设备封装： | SOD-323 |
| 包装： | 标准包装 |
| 产品目录页面： | 1471 (CN2011-ZH PDF) |
| 其它名称： | SBR1A40S3-7DKR |
SBR1A40S3
Document number: DS31528 Rev. 2 - 2
2 of 4
www.diodes.com
November 2010
? Diodes Incorporated
SBR1A40S3
SBR is a registered trademark of Diodes Incorporated.
Maximum Ratings
@TA
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VRM
40 V
RMS Reverse Voltage
VR(RMS)
28 V
Average Rectified Output Current TC
= 65°C
IO
1 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on Rated Load
IFSM
20 A
Thermal Characteristics
Characteristic Symbol Value Unit
Maximum Thermal Resistance
Thermal Resistance Junction to Ambient (Note 4)
Thermal Resistance Junction to Ambient (Note 5)
RθJA
RθJA
473
407
oC/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
oC
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 6)
V(BR)R
40 - - V IR
= 100
μA
Forward Voltage Drop
VF
- - 0.55 V IF
= 1A, T
J
= 25oC
Leakage Current (Note 6)
IR
- 10 100 μA VR
= 40V, T
J
= 25oC
Junction Capacitance
CJ
- 55 - pF VR
= 4.0V, f = 1MHz
Notes: 4. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com.
5. Polymide PCB, 2 oz. Copper, minimum recommended
pad layout pad layout per http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
Fig.1 Typical Forward Characteristics
0.1
0 0.2 0.4 0.6 0.8
1
10
100
1,000
10,000
V , INSTANTANEOUS FORWARD VOLTAGE (V)F
I , INSTANTANEOUS FORWARD CURRENT (mA)
F
T = -65°CA
T = 100°CA
T = 150°CA
T = -65°CA
T = 25°CA
T = 75°CA
T = 100°CA
T = 125°CA
相关PDF资料 |
PDF描述 |
|---|---|
| SBR1A40SA-13 | DIODE SBR 40V 1A SMA |
| SBR1U150SA-13 | DIODE SBR 1A 150V SMA |
| SBR1U200P1-7 | DIODE SBR 200V 1A POWERDI123 |
| SBR1U30SV-7 | DIODE SBR 30V 1A SOT-563 |
| SBR1U400P1-7 | DIODE SBR 400V 1A POWERDI123 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SBR1A40SA | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:1.0A SBR SUPER BARRIER RECTIFIER SMA |
| SBR1A40SA-13 | 功能描述:肖特基二极管与整流器 SUPER BARRIER REC 1A,40V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SBR1A40SA-13-F | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:1.0A SBR SUPER BARRIER RECTIFIER SMA |
| SBR1F | 制造商:SEMTECH 制造商全称:Semtech Corporation 功能描述:FAST RECOVERY 1-PHASE SILICON BRIDGE RECTIFIERS |
| SBR1U150SA | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SURFACE MOUNT SUPER BARRIER RECTIFIER |
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