参数资料
型号: SBR3U150LP-7
厂商: Diodes Inc
文件页数: 2/5页
文件大小: 216K
描述: DIODE SBR 3A 150V 8-DFN
标准包装: 3,000
系列: SBR®
二极管类型: 超级势垒
电压 - (Vr)(最大): 150V
电流 - 平均整流 (Io): 3A
电压 - 在 If 时为正向 (Vf)(最大): 910mV @ 3A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 2mA @ 150V
安装类型: 表面贴装
封装/外壳: 8-UDFN 裸露焊盘
供应商设备封装: 8-DFN3030(3x3)
包装: 带卷 (TR)
SBR is a registered trademark of Diodes Incorporated.
SBR3U150LP
Document number: DS31072 Rev. 7 - 2
2 of 5
www.diodes.com
October 2012
? Diodes Incorporated
SBR3U150LP
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VRM
150 V
RMS Reverse Voltage
VR(RMS)
106 V
Average Rectified Output Current (See Figure 1)
IO
3.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
33 A
Thermal Characteristics
Characteristic Symbol Value Unit
Maximum Thermal Resistance
Thermal Resistance Junction to Ambient (Note 5) @ TA
= +25oC
RθJA
60 °C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 6)
V(BR)R
150 - - V IR
= 2mA
Forward Voltage
VF
- - 0.91 V IF
= 3.0A, T
J
= +25oC
Reverse Current (Note 6)
IR
- - 2 mA VR
= 150V, T
J
= +25oC
Notes: 5. Device mounted on polymide substrate, 2oz. Copper, 75mm2
pad area, double side PCB.
6. Short duration pulse test used to minimize self-heating effect.
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