- 您现在的位置：买卖IC网 > Datasheet目录146 > SBR80520LT3G (ON Semiconductor)DIODE SCHOTTKY 20V 0.5A SOD-123 Datasheet资料下载
参数资料
| 型号： | SBR80520LT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 146K |
| 描述： | DIODE SCHOTTKY 20V 0.5A SOD-123 |
| 标准包装： | 10,000 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 20V |
| 电流 - 平均整流 (Io)： | 500mA |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 385mV @ 500mA |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 250µA @ 20V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOD-123 |
| 供应商设备封装： | SOD-123 |
| 包装： | 带卷 (TR) |
    MBR0520LT1G, SBR80520LT1G, MBR0520LT3G, SBR80520LT3G http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V V RRM RWM VR 20 V Average Rectified Forward Current (Rated VR, TL = 90 ?C) IF(AV) 0.5 A Non?Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 5.5 A Storage Temperature Range Tstg ?65 to +150 ?C Operating Junction Temperature TJ ?65 to +125 ?C Voltage Rate of Change (Rated VR) dv/dt 1000 V/s ESD Ratings: Machine Model = C Human Body Model = 3B > 400 > 8000 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance; Junction?to?Ambient (Note 1) RJA 206 ?C/W Thermal Resistance; Junction?to?Lead RJL 150 ?C/W 1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) vF TJ = 25 ?C TJ = 100 ?C V (iF = 0.1 Amps) (iF = 0.5 Amps) 0.300 0.385 0.220 0.330 Maximum Instantaneous Reverse Current (Note 2) IR TJ = 25 ?C TJ = 100 ?C mA (VR = 10 V) (Rated DC Voltage = 20 V) 75 A 250 A 5 mA 8 mA 2. Pulse Test: Pulse Width = 300 s, Duty Cycle ? 2%. |
相关PDF资料 |
PDF描述 |
|---|---|
| SBR8A45SP5-13 | DIODE BYPASS 45V 8A POWERDI5 |
| SBR8A60P5-13 | DIODE SBR 60V 8A POWERDI5 |
| SBR8U20SP5-13 | DIODE SBR 20V 8A POWERDI5 |
| SBR8U60P5-13 | DIODE SBR 8A 60V POWERDI5 |
| SBRB1045G | DIODE SCHOTTKY 45V 10A D2PAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SBR8060 | 制造商:Microsemi Corporation 功能描述:SCHOTTKY 60V 80A 2PIN DO-203AB - Bulk |
| SBR8060R | 制造商:Microsemi Corporation 功能描述:SCHOTTKY 60V 80A 2PIN DO-203AB - Bulk |
| SBR8100 | 制造商:DAESAN 制造商全称:Daesan Electronics Corp. 功能描述:CURRENT 8.0 AMPERES |
| SBR820 | 制造商:DAESAN 制造商全称:Daesan Electronics Corp. 功能描述:CURRENT 8.0 AMPERES |
| SBR820100CT | 制造商:ON Semiconductor 功能描述: |
发布紧急采购，3分钟左右您将得到回复。