参数资料
型号: SBS822-TL-H
厂商: ON Semiconductor
文件页数: 1/4页
文件大小: 196K
描述: DIODE SCHOTTKY 1A 20V EMH8
标准包装: 3,000
电压 - 在 If 时为正向 (Vf)(最大): 460mV @ 1A
电流 - 在 Vr 时反向漏电: 110µA @ 10V
电流 - 平均整流 (Io)(每个二极管): 1A
电压 - (Vr)(最大): 20V
反向恢复时间(trr): 10ns
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 2 个独立式
安装类型: 表面贴装
封装/外壳: 6-SMD(5引线),扁引线
供应商设备封装: 5-MCPH
包装: 带卷 (TR)
70313 TKIM TC-00002926/62409SB TKIM TC-00002001 No. A1504-1/4
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
July, 2013
SBS822
Schottky Barrier Diode
20V, 1A, Low VF Dual MCPH5
Applications
?
High frequency recti
?
cation (switching regulators, converters, choppers).
Features
?
Low forward voltage (I
F=0.5A, VF
max=0.39V) (I
F=1A, VF
max=0.46V).
?
Composite type with 2 low V
F
SBDs in one package, facilitating high-density mounting.
?
Ultrasmall-size package permitting applied sets to be small and slim (Mounting height 0.85mm).
?
Halogen free compliance.
Speci?
cations
Absolute Maximum Ratings
at Ta=25°C
(Value per element)
Parameter Symbol Conditions Ratings Unit
Repetitive Peak Reverse Voltage VRRM
20 V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
20 V
Average Output Current
IO
When mounted on ceramic substrate (1000mm2×0.8mm) Rectangular wave
1A
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle 5 A
Junction Temperature Tj
--55 to +125 °C
Storage Temperature Tstg
--55 to +125 °C
Package Dimensions
unit : mm (typ)
7021A-001
Ordering number : ENA1504A
Ordering & Package Information
Device Package Shipping note
SBS822-TL-H
MCPH5
SC-88A, SC-70-5, SOT-353
3,000
pcs./reel
Pb-Free
and
Halogen Free
SBS822-TL-W
MCPH5
SC-88A, SC-70-5, SOT-353
3,000
pcs./reel
Packing Type : TL
Marking
Electrical Connection
SJ
LOT No.
LOT No.
5
123
4
TL
1 : Anode
2 : No Contact
3 : Anode
4 : Cathode
5 : Cathode
MCPH5
2.0
0.25
1.6
2.1
0.25
0.85
0.3
0.65
0.15
0 to 0.02
0.07
54
123
54
123
SBS822-TL-H
SBS822-TL-W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
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