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参数资料
| 型号： | SBT80-10JS |
| 元件分类： | 整流器 |
| 英文描述： | 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | TO-220ML, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 35K |
| 代理商： | SBT80-10JS |
SBT80-10JS
No. A0501-1/3
Applications
High frequency rectification (switching regulators, converters, choppers).
Features
Tj=150
°C.
Low forward voltage (VF max=0.80V).
Short reverse recovery time.
Low switching noise.
High reliability due to highly reliable planar structure.
Micaless package facilitating mounting.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Repetitive Peak Reverse Voltage
VRRM
100
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
105
V
Average Output Current
IO
50Hz resistive load, Sine wave Tc=81
°C8
A
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
60
A
Junction Temperature
Tj
--55 to +150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Reverse Voltage
VR
IR=1mA, Tj=25°C*
100
V
Forward Voltage
VF
IF=3.0A, Tj=25°C*
0.80
V
Reverse Current
IR
VR=50V, Tj=25°C*
0.1
mA
Interterminal Capacitance
C
VR=10V, Tj=25°C*
90
pF
Thermal Resistance
Rth(j-c)
Junction-Case : Smoothed DC
5.0
°C / W
Note) * : Value per element
SANYO Semiconductors
DATA SHEET
Ordering number : ENA0501
82506SD MS IM TC-00000105
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SBT80-10JS
Schottky Barrier Diode (Twin Type Cathode Common)
100V, 8A Rectifier
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SBT80-10LS | 功能描述:肖特基二极管与整流器 REC TO220 8A 100V SHOTTKY RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SBT80-10Y | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Schottky Barrier Diode (Twin Type · Cathode Common) 100V, 8A Rectifier |
| SBT80-10Y-DL-E | 功能描述:肖特基二极管与整流器 REC SMP-FD 8A 100V SHOTTKY RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SBT80-10Y-E | 功能描述:肖特基二极管与整流器 REC SMP 8A 100V SHOTTKY RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SBT80S | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:SCHOTTKY BARRIER RECTIFIER DIODES |
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