参数资料
型号: SBYV26C/4
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL
封装: PLASTIC, DO-41, 2 PIN
文件页数: 1/4页
文件大小: 330K
代理商: SBYV26C/4
SBYV26C
Document Number 88735
24-Oct-05
Vishay General Semiconductor
www.vishay.com
1
Pat
ente
d*
DO-204AL (DO-41)
*Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
to Patent No. 3,930,306
Glass Passivated Ultrafast Rectifier
Major Ratings and Characteristics
IF(AV)
1.0 A
VRRM
600 V
IFSM
30 A
trr
30 ns
VF
1.3 V
Tj max.
175 °C
Features
Cavity-free glass-passivated junction
Ideal for printed circuit boards
Ultrafast reverse recovery time
Low forward voltage drop
Low leakage current
Low switching losses, high efficiency
High forward surge capability
Meets environmental standard MIL-S-19500
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer and Telecommuni-
cation
Mechanical Data
Case: DO-204AL, molded plastic over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
TA = 25 °C unless otherwise specified
Notes:
(1) Peak reverse energy measured with 8/20 s surge
Parameter
Symbol
Value
Unit
Maximum repetitive peak reverse voltage
VRRM
600
V
Maximum RMS voltage
VRMS
420
V
Maximum DC blocking voltage
VDC
600
V
Maximum average forward rectified current 0.375" (9.5 mm)
lead length at TL = 85 °C (See Fig. 1)
IF(AV)
1.0
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
30
A
Non repetitive peak reverse energy (1)
ERSM
5.0
mJ
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
相关PDF资料
PDF描述
SGL41-40-E3/76 1 A, 40 V, SILICON, SIGNAL DIODE, DO-213AB
SMB10J28-E3/55 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMB10J28A-E3/55 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMB10J8.0-E3/51 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMB8J13CA-E3/55 800 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
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SBYV26C-E3/1 功能描述:整流器 600 Volt 1.0A 30ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
SBYV26C-E3/23 功能描述:整流器 600 Volt 1.0A 30ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
SBYV26C-E3/4 功能描述:整流器 600 Volt 1.0A 30ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
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SBYV26C-E3/54 功能描述:整流器 600 Volt 1.0A 30ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel