Device User Guide — 9S12DT128DGV2/D V02.15
114
Freescale Semiconductor
Table A-12 NVM Reliability Characteristics1
NOTES:
1. TJavg will not exeed 85°C considering a typical temperature profile over the lifetime of a consumer, industrial or automotive
application.
Conditions are shown in (Table A-4) unless otherwise noted
Num C
Rating
Symbol
Min
Typ
Max
Unit
Flash Reliability Characteristics
1
C
Data retention after 10,000 program/erase cycles at an
average junction temperature of TJavg ≤ 85°C
tFLRET
15
1002
2. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25
°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618.
—
Years
2
C
Data retention with <100 program/erase cycles at an
average junction temperature TJavg ≤ 85°C
20
1002
—
3
C
Number of program/erase cycles
(–40
°C
≤ T
J ≤ 0°C)
nFL
10,000
—
Cycles
4
C
Number of program/erase cycles
(0
°C
≤ T
J ≤ 140°C)
10,000
100,0003
3. Spec table quotes typical endurance evaluated at 25
°C for this product family, typical endurance at various temperature
can be estimated using the graph below. For additional information on how Freescale defines Typical Endurance, please
refer to Engineering Bulletin EB619.
—
EEPROM Reliability Characteristics
5
C
Data retention after up to 100,000 program/erase cycles
at an average junction temperature of TJavg ≤ 85°C
tEEPRET
15
1002
—
Years
6
C
Data retention with <100 program/erase cycles at an
average junction temperature TJavg ≤ 85°C
20
1002
—
7
C
Number of program/erase cycles
(–40
°C
≤ T
J ≤ 0°C)
nEEP
10,000
—
Cycles
8
C
Number of program/erase cycles
(0
°C < T
J ≤ 140°C)
100,000
300,0003
—