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参数资料
| 型号： | SCA1N4148 |
| 厂商： | SEMICOA CORP |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.2 A, 75 V, SILICON, SIGNAL DIODE |
| 封装： | HERMETIC SEALED, GLASS, DIE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 815K |
| 代理商： | SCA1N4148 |
Preliminary
FEATURES
Superior construction with tungsten slugs
Category-I metallurgical bonds
Hermetical sealed glass package
Low forward voltage drop
Low reverse leakage current
SCA1N4148
SWITCHING DIODE—DIE ONLY
High Reliability—High Speed Switching
Radiation Hardness Assured
PACKAGING
DESCRIPTION
This “high reliability high-speed switching” die is suitable for numerous military applications.
This die meets the most stringent Hybrid applications.
DIODES
APPLICATIONS
Space, military and other high-reliability
applications
Applications requiring high-speed switching
Axial lead (TBD)
SMT (UB)
Highly stable reverse breakdown characteristics
Also provided in various surface mount type
packages and bare die
Radiation hard version is available
SMT
Bare die for HYBRID
manufacturers
Electrical Characteristics
Operation Conditions
min
typ
max
unit
symbol
Reverse current
VR = 20V DC, TA=+25°C
-
TBD
25.0
nA
IR1
Rated VRWM, TA=+25°C
-
TBD
500.0
nA
IR2
VR = 20V DC, TA=+150°C
-
TBD
35.0
uA
IR3
Rated VRWM, TA=+150°C
-
TBD
75.0
uA
IR4
Forward voltage drop
SCA1N4148
IF=10mA, TA=+25°C
-
TBD
0.8
V
VF1
SCA1N4148
IF=100mA, TA=+25°C
-
TBD
1.20
V
VF2
SCA1N4148
IF=10mA, TA=+150°C
-
TBD
0.8
V
VF1
SCA1N4148
IF=100mA, TA=-55°C
-
TBD
1.30
V
VF2
Breakdown voltage
IR=100uA, TA=+25°C
100
TBD
-
V
VBR1
Capacitance
VR=0V, f=1MHz
-
TBD
4.0
pF
C1
Capacitance
VR=1.5V, f=1MHz
-
TBD
2.8
pF
C2
Switching Characteristics
Reverse recovery time
IF=10mA, IR(REC)
=1.0mA
TBD
5
nsec
Trr
Forward recovery voltage
Tr=10ns, IF=500mA
TBD
5
V(peak)
Vfr
Forward recovery time
Tr=10ns, IF=500mA
TBD
20
nsec
Tfr
Disclaimer: The information and specs on this data sheet is for preliminary use and actual specs may be
changed at any time without notice and final specs will be determined at time of order.
Oct. 2010
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