- 您现在的位置：买卖IC网 > PDF目录40095 > SD05T3 (ON SEMICONDUCTOR) 350 W, UNIDIRECTIONAL, SILICON, TVS DIODE PDF资料下载
参数资料
| 型号： | SD05T3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 350 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | PLASTIC, CASE 477-02, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 53K |
| 代理商： | SD05T3 |
SD05T1 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation @ 20
ms (Note 1)
@ TL ≤ 25°C
Ppk
350
Watts
IEC 6100042 (ESD)
Air
Contact
±15
±8.0
kV
IEC 6100044 (EFT)
40
A
ESD Voltage (Human Body Model (HBM) Waveform per IEC 6100042)
VPP
30
kV
Derate above 25
°C
°PD°
200
1.6
°mW°
mW/
°C
Thermal Resistance JunctiontoAmbient
RqJA
635
°C/W
Junction and Storage Temperature Range
TJ, Tstg
55 to +150
°C
Lead Solder Temperature Maximum (10 Second Duration)
TL
260
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
*Other voltages may be available upon request.
1. Nonrepetitive current pulse, per Figure 6.
2. FR5 = 1.0 x 0.75 x 0.62 in.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
UniDirectional TVS
IPP
IF
V
I
IR
IT
VRWM
VC VBR
VF
ELECTRICAL CHARACTERISTICS
Device
VRWM
(V)
IR @ VRWM
(
mA)
VBR, Breakdown Voltage
(V)
IT
mA
VC @ IPP = 5 A
(Note 3)
(V)
Max IPP
(Note 3)
(A)
VC @ Max IPP
(Note 3)
(V)
Max
Capacitance
(pF)
Min
Max
VR = 0 V
f = 1.0 MHz
SD05T1, G
5.0
10
6.2
7.3
1.0
9.8
24
14.5
350
SD12T1, G
12
1.0
13.3
15.75
1.0
19
15
25
150
3. 8
× 20 ms pulse waveform.
相关PDF资料 |
PDF描述 |
|---|---|
| SD12T3G | 350 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| SD060SB100A | 3 A, SILICON, RECTIFIER DIODE |
| SD066SCU100B | 3 A, SILICON, RECTIFIER DIODE |
| SD200SCU100A | 60 A, SILICON, RECTIFIER DIODE |
| SD090SB60C | 7.5 A, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SD05TC | 制造商:SEMTECH 制造商全称:Semtech Corporation 功能描述:Single Line TVS Diode for ESD Protection in Portable Electronics |
| SD05TG | 制造商:SEMTECH 制造商全称:Semtech Corporation 功能描述:Single Line TVS Diode for ESD Protection in Portable Electronics |
| SD060-10-RC | 制造商:Bourns / JW Miller 功能描述:POWER TRANSFORMER,HAZMAT - Bulk |
| SD060-11-41-211 | 功能描述:PHOTODETECTOR INGAAS 1.5MM TO-39 RoHS:是 类别:传感器，转换器 >> 光学 - 光电检测器 - 光电二极管 系列:- 标准包装:1 系列:- 波长:850nm 颜色 - 增强型:- 光谱范围:400nm ~ 1100nm 二极管类型:引脚 nm 下响应率:0.62 A/W @ 850nm 响应时间:5ns 电压 - (Vr)（最大）:50V 电流 - 暗（标准）:1nA 有效面积:1mm² 视角:150° 工作温度:-40°C ~ 100°C 封装/外壳:径向，5mm 直径（T 1 3/4） 其它名称:475-2649-6 |
| SD060-24-RC | 制造商:Bourns / JW Miller 功能描述:POWER TRANSFORMER,HAZMAT - Bulk 制造商:Bourns Inc 功能描述: |
发布紧急采购，3分钟左右您将得到回复。