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参数资料
| 型号： | SD05T3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 350 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | PLASTIC, CASE 477-02, 2 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 53K |
| 代理商： | SD05T3 |
SD05T1 Series
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. SD05 Typical Capacitance versus Bias
Voltage
55
85
1000
Figure 2. SD12 Typical Capacitance versus
Bias Voltage
TEMPERATURE (
°C)
125 145
100
10
LEAKAGE
CURRENT
(nA)
0
1.5
3.5
5
280
220
180
160
120
100
C,
CAP
ACIT
ANCE
(pF)
BIAS (V)
200
140
100
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
200
TA, AMBIENT TEMPERATURE (°C)
PEAK
PULSE
DERA
TING
IN
%
OF
PEAK
POWER
OR
CURRENT
@
T
A
=
25
°C
100
90
80
70
60
50
40
30
20
10
0
020
40
60
80
t, TIME (ms)
%
OF
PEAK
PULSE
CURRENT
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
PEAK VALUE IRSM @ 8 ms
HALF VALUE IRSM/2 @ 20 ms
0.5
2.5
4.5
65
45
25
5
35
Figure 3. SD05 Typical Leakage Current
versus Temperature
55
95
100
Figure 4. SD12 Typical Leakage Current
versus Temperature
TEMPERATURE (
°C)
120
145
10
1
0.1
LEAKAGE
CURRENT
(nA)
04
8
12
140
120
80
60
20
0
C,
CAP
ACIT
ANCE
(pF)
BIAS (V)
100
40
26
10
70
45
20
5
30
240
260
12
3
4
15
105
Figure 5. Pulse Derating Curve
Figure 6. 8
× 20 ms Pulse Waveform
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| SD060-11-41-211 | 功能描述:PHOTODETECTOR INGAAS 1.5MM TO-39 RoHS:是 类别:传感器，转换器 >> 光学 - 光电检测器 - 光电二极管 系列:- 标准包装:1 系列:- 波长:850nm 颜色 - 增强型:- 光谱范围:400nm ~ 1100nm 二极管类型:引脚 nm 下响应率:0.62 A/W @ 850nm 响应时间:5ns 电压 - (Vr)（最大）:50V 电流 - 暗（标准）:1nA 有效面积:1mm² 视角:150° 工作温度:-40°C ~ 100°C 封装/外壳:径向，5mm 直径（T 1 3/4） 其它名称:475-2649-6 |
| SD060-24-RC | 制造商:Bourns / JW Miller 功能描述:POWER TRANSFORMER,HAZMAT - Bulk 制造商:Bourns Inc 功能描述: |
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