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| 型号： | SD103AW-V-GS08 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 40 V, SILICON, SIGNAL DIODE |
| 封装： | ROHS COMPLIANT PACKAGE-2 |
| 文件页数： | 1/4页 |
| 文件大小： | 56K |
| 代理商： | SD103AW-V-GS08 |
SD103AW-V, SD103BW-V, SD103CW-V
Document Number 85681
Rev. 1.4, 05-Aug-10
Vishay Semiconductors
www.vishay.com
1
17431
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Small Signal Schottky Diodes
Features
The low forward voltage drop and fast
switching make it ideal for protection of
MOS devices, steering, biasing, and
coupling diodes for fast switching and
low logic level applications.
Other applications are click suppression,
efficient full wave bridges in telephone
subsets,
and
blocking
diodes
in
rechargeable low voltage battery systems.
The SD103 series is a metal-on-silicon Schottky
barrier device which is protected by a PN junction
guard ring.
This diode is also available in the MiniMELF case
with the type designations LL103A to LL103C,
DO-35 case with the type designations SD103A to
SD103C
and
SOD-323
case
with
type
designations SD103AWS-V to SD103CWS-V.
For general purpose applications
AEC-Q101 qualified
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes/options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Note
1) Valid provided that electrodes are kept at ambient temperature
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Note
1) Valid provided that electrodes are kept at ambient temperature
Part
Ordering code
Type marking
Remarks
SD103AW-V
SD103AW-V-GS18 or SD103AW-V-GS08
S6
Tape and reel
SD103BW-V
SD103BW-V-GS18 or SD103BW-V-GS08
S7
Tape and reel
SD103CW-V
SD103CW-V-GS18 or SD103CW-V-GS08
S8
Tape and reel
Parameter
Test condition
Part
Symbol
Value
Unit
Peak reverse voltage
SD103AW-V
VRRM
40
V
SD103BW-V
VRRM
30
V
SD103CW-V
VRRM
20
V
Power dissipation
(Infinite heat sink)
Ptot
400 1)
mW
Single cycle surge
10 s square wave
IFSM
2A
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambient air
RthJA
300 1)
K/W
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
- 55 to + 150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| SD103CW-V-GS18 | 20 V, SILICON, SIGNAL DIODE |
| SD103AWS/D6 | 40 V, SILICON, SIGNAL DIODE |
| SD103AWS | 40 V, SILICON, SIGNAL DIODE |
| SD103BWS | 30 V, SILICON, SIGNAL DIODE |
| SD103BWST/R7 | 0.35 A, 30 V, SILICON, SIGNAL DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SD103AW-V-GS18 | 功能描述:肖特基二极管与整流器 5uA 40 Volt 15A IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SD103AX | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:Schottky Barrier Diode |
| SD103AX_12 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:40V , 0.35A Schottky Plastic-Encapsulated Diode |
| SD103AXG | 功能描述:肖特基二极管与整流器 Low Vf Schottky 40V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SD103AXGRK | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:Low VF SMD Schottky Barrier Diode |
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