参数资料
型号: SD103AW-V-GS08
厂商: VISHAY SEMICONDUCTORS
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 40 V, SILICON, SIGNAL DIODE
封装: ROHS COMPLIANT PACKAGE-2
文件页数: 2/4页
文件大小: 56K
代理商: SD103AW-V-GS08
www.vishay.com
2
Document Number 85681
Rev. 1.4, 05-Aug-10
SD103AW-V, SD103BW-V, SD103CW-V
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Min.
Typ.
Max.
Unit
Leakage current
VR = 30 V
SD103AW-V
IR
5A
VR = 20 V
SD103BW-V
IR
5A
VR = 10 V
SD103CW-V
IR
5A
Forward voltage drop
IF = 20 mA
VF
370
mV
IF = 200 mA
VF
600
mV
Diode capacitance
VR = 0 V, f = 1 MHz
CD
50
pF
Reverse recovery time
IF = IR = 50 mA to 200 mA,
recover to 0.1 IR
trr
10
ns
Figure 1. Typical Variation of Forward Current vs. Forward Voltage
Figure 2. Typical High Current Forward Conduction Curve
18488
0.01
1000
100
0.1
1
10
0
0.4
0.6
0.8
1.0
0.2
I
-
F
or
w
ard
C
u
rrent
(mA)
F
VF - Forward Voltage (V)
18489
4
5
3
2
0
1
0.5
1.0
01.5
I
-
F
o
rw
ard
C
u
rrent
(A)
F
VF - Forward Voltage (V)
duty cycle = 2 %
tp = 300 ms
Figure 3. Typical Variation of Reverse Current at Various
Temperatures
Figure 4. Typical Capacitance vs. Reverse Voltage
0.01
0.1
1
10
100
1000
0
5
10 15 20 25 30 35 40 45 50
V - Reverse Voltage (V)
I R
-
Re
v
erse
C
u
rrent
(
A)
R
20084
75 °C
50 °C
25 °C
100 °C
Tamb = 125 °C
18491
10
20
30
40
050
C-
Diode
Capacitance
(pF)
D
VR - Reverse Voltage (V)
100
10
1
相关PDF资料
PDF描述
SD103CW-V-GS18 20 V, SILICON, SIGNAL DIODE
SD103AWS/D6 40 V, SILICON, SIGNAL DIODE
SD103AWS 40 V, SILICON, SIGNAL DIODE
SD103BWS 30 V, SILICON, SIGNAL DIODE
SD103BWST/R7 0.35 A, 30 V, SILICON, SIGNAL DIODE
相关代理商/技术参数
参数描述
SD103AW-V-GS18 功能描述:肖特基二极管与整流器 5uA 40 Volt 15A IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
SD103AX 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:Schottky Barrier Diode
SD103AX_12 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:40V , 0.35A Schottky Plastic-Encapsulated Diode
SD103AXG 功能描述:肖特基二极管与整流器 Low Vf Schottky 40V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
SD103AXGRK 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:Low VF SMD Schottky Barrier Diode