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参数资料
| 型号： | SD1100C32C |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1100 A, 3200 V, SILICON, RECTIFIER DIODE |
| 封装： | CERAMIC, B-43, PUK-2 |
| 文件页数： | 6/7页 |
| 文件大小： | 112K |
| 代理商： | SD1100C32C |
SD1100C..C Series
6
Bulletin I2072 rev. D 04/00
www.irf.com
Fig. 9 - Forward Power Loss Characteristics
Fig. 10 - Forward Power Loss Characteristics
Fig. 11 - Forward Power Loss Characteristics
Fig. 12 - Forward Power Loss Characteristics
Fig. 13 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 14 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
0
50 0
1000
1500
2000
2500
3000
3500
0
4 00
800
1200
1 60 0
180°
120°
90°
60°
30°
RMS Limit
M
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A
v
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rag
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ar
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(W
)
Average For ward Curr en t (A)
Co nd uct io n A ng le
SD 1100 C..C Series
(400V to 2 000 V)
T = 18 0°C
J
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0
5 00
1000
1500
2000
2 50 0
3 00 0
DC
180°
120°
90°
60°
30°
RM S Lim it
C o nd u c tion Pe riod
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Lo
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(W
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Average Forward Current (A)
SD110 0C..C Series
(40 0V to 200 0V )
T = 1 80°C
J
0
50 0
1000
1500
2000
2500
3000
0
200
400
6 00
800 1 00 0 1200 1400
180 °
120 °
90 °
60 °
30 °
RM S Limit
Co nd uc tio n Ang le
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(W
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Average Forw ard Curr ent (A)
SD1 100C..C Series
(250 0V to 320 0V)
T = 15 0°C
J
0
50 0
1000
1500
2000
2500
3000
3500
0
400
800
1200
1600
2000
2400
DC
18 0°
12 0°
90°
60°
30°
RMS Lim it
C o nd u ction Pe riod
M
a
x
imu
m
A
v
e
ra
g
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F
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a
rd
P
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(
W
)
Aver age Forward Current (A)
SD110 0C..C Series
(25 00V to 32 00V )
T = 1 50°C
J
300 0
400 0
500 0
600 0
700 0
800 0
900 0
100 00
110 00
120 00
11 0
1 0 0
N um b er O f E q ua l A m p litud e H a lf C y cle Cu rrent Pulses (N )
P
e
ak
Hal
f
S
in
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W
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C
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t(
A
)
In it ia l T = 1 8 0 °C
@ 60 H z 0.008 3 s
@ 50 H z 0.010 0 s
J
At An y R a t e d L o a d C o n d it io n An d W it h
R a t e d V
A p p lie d Fo llo w in g S urg e .
RRM
SD 1 100C ..C S e rie s
( 400V t o 200 0V )
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
0.01
0.1
1
Puls e Train Dura tion (s)
P
e
a
kHal
f
S
in
e
W
a
v
e
F
o
rw
ar
d
C
u
rr
e
n
t(
A
)
V ersus Pulse Tr ain Duration .
In itial T = 1 80 °C
No Voltage Reapplied
Rated V
Reapplied
RRM
J
Maxim um Non Repetitive Surge Current
SD1 100C..C Series
(4 00V to 20 00V )
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SD1100C32L | 功能描述:DIODE STD REC 3200V 910A B-PUK RoHS:是 类别:半导体模块 >> 二极管，整流器 系列:- 标准包装:10 系列:- 电压 - 在 If 时为正向 (Vf)（最大）:1.45V @ 30A 电流 - 在 Vr 时反向漏电:15µA @ 400V 电流 - 平均整流 (Io)（每个二极管）:30A 电压 - (Vr)（最大）:400V 反向恢复时间(trr):65ns 二极管类型:标准 速度:快速恢复 = 200mA（Io） 二极管配置:2 个独立式 安装类型:底座安装 封装/外壳:ISOTOP 供应商设备封装:ISOTOP? 包装:管件 |
| SD1100CHP | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS |
| SD1100DD | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS |
| SD1100HD | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS |
| SD1100P | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:1.0 Amp Schottky Barrier Rectifiers |
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