参数资料
型号: SD1100C32LPBF
元件分类: 整流器
英文描述: 910 A, 3200 V, SILICON, RECTIFIER DIODE, DO-200AB
封装: CERAMIC, BPUK-2
文件页数: 3/7页
文件大小: 112K
代理商: SD1100C32LPBF
SD1100C..L Series
3
Bulletin I2073 rev. D 04/00
www.irf.com
Parameter
Units
Conditions
T
J
Max. junction operating temperature range
-40 to 180
-40 to 150
T
stg
Max. storage temperature range
-55 to 200
R
thJ-hs
Max. thermal resistance, junction
0.11
DC operation single side cooled
to heatsink
0.05
DC operation double side cooled
F
Mounting force, ± 10%
9800
N
(1000)
(Kg)
wt
Approximate weight
250
g
Case style
DO-200AB (B-PUK)
See Outline Table
°C
K/W
SD1100C..L
04 to 20
25 to 32
Ordering Information Table
1
-
Diode
2
-
Essential part number
3
-
0 = Standard recovery
4
-
C = Ceramic Puk
5
-
Voltage code: Code x 100 = V
RRM
(See Voltage Ratings table)
6
-
L = Puk Case DO-200AB (B-PUK)
Sinusoidal conduction
Rectangular conduction
Conduction angle
Units
Conditions
Single Side Double Side
180°
0.011
0.008
120°
0.014
0.015
0.014
90°
0.018
0.019
60°
0.026
0.027
0.028
30°
0.045
0.046
K/W
T
J = TJ max.
1
23
4
5
6
Device Code
SD 110
0
C
32
L
R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs when devices operate at different conduction angles than DC)
Thermal and Mechanical Specifications
相关PDF资料
PDF描述
SD1100C08L 1170 A, 800 V, SILICON, RECTIFIER DIODE, DO-200AB
SD1100C20L 1170 A, 2000 V, SILICON, RECTIFIER DIODE, DO-200AB
SD1100C04LPBF 1170 A, 400 V, SILICON, RECTIFIER DIODE, DO-200AB
SD1100C32L 910 A, 3200 V, SILICON, RECTIFIER DIODE, DO-200AB
SD1100C16LPBF 1170 A, 1600 V, SILICON, RECTIFIER DIODE, DO-200AB
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