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参数资料
| 型号： | SD150N12PV |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 150 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AC |
| 封装： | METAL GLASS, DO-30, 1 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 186K |
| 代理商： | SD150N12PV |
SD150N/R Series
2
www.irf.com
Bulletin I2077 rev. B 11/01
SD150N/R
15
E
LECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V
RRM , maximum repetitive
V
RSM , maximum non-
I
RRM max.
Type number
Code
peak reverse voltage
repetitive peak rev. voltage
@ T
J = TJ max.
VV
mA
04
400
500
08
800
900
12
1200
1300
16
1600
1700
20
2000
2100
25
2500
2600
I
F(AV)
Max. average forward current
150
A
180° conduction, half sine wave
@ Case temperature
125
°C
I
F(AV)
Max. average forward current
200
A
180° conduction, half sine wave
@ Case temperature
110
°C
I
F(RMS) Max. RMS forward current
235
A
DC @ 113°C case temperature
I
FSM
Max. peak, one-cycle forward,
3600
t = 10ms
No voltage
non-repetitive surge current
3770
t = 8.3ms
reapplied
3000
t = 10ms
100% V
RRM
3170
t = 8.3ms
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
65
t = 10ms
No voltage
Initial T
J = TJ max.
59
t = 8.3ms
reapplied
46
t = 10ms
100% V
RRM
42
t = 8.3ms
reapplied
I2
√t
Maximum I2
√t for fusing
650
KA2
√s
t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1 Low level value of threshold
voltage
V
F(TO)2 High level value of threshold
voltage
r
f1
Low level value of forward
slope resistance
r
f2
High level value of forward
slope resistance
V
FM
Max. forward voltage drop
1.5
V
Ipk= 470A, TJ = TJ max, tp = 10ms sinusoidal wave
Parameter
SD150N/R
Units Conditions
Forward Conduction
KA2s
A
V
m
1.04
(I >
π x I
F(AV)),TJ = TJ max.
1.27
(16.7% x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ max.
1.06
(I >
π x I
F(AV)),TJ = TJ max.
0.93
(16.7% x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ max.
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