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参数资料
| 型号： | SD150N12PV |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 150 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AC |
| 封装： | METAL GLASS, DO-30, 1 PIN |
| 文件页数： | 6/8页 |
| 文件大小： | 186K |
| 代理商： | SD150N12PV |
SD150N/R Series
6
www.irf.com
Bulletin I2077 rev. B 11/01
Fig. 3 - Forward Power Loss Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 1 - Current Ratings Characteristics
120
130
140
150
160
170
180
0
20
40
60
8 0
100 12 0 1 4 0 1 6 0
30
60
90
120
180
Averag e Forw ard C urren t (A)
Cond uc tio n Ang le
Ma
x
imu
m
A
llo
wa
b
le
C
a
se
T
e
mp
e
ra
tu
re
(
C
)
SD 150N/R Serie s
R
(D C ) = 0.23 K/W
thJ C
11 0
12 0
13 0
14 0
15 0
16 0
17 0
18 0
0
40
80
12 0
16 0
200
240
DC
30
60
90
120
180
Cond u ction P e rio d
Ma
x
imu
m
A
llo
w
a
b
le
Ca
se
T
e
m
p
e
ra
tu
re
(
C
)
Averag e Forw ard C urre n t (A)
SD 150N/R Se rie s
R
(D C ) = 0.23 K/W
thJ C
20
40
60
80
1 00 1 20 14 0 160 18 0
M a xim um A llow a ble Am bien t Te m p era ture ( C )
0.2
K
/W
0.3
K/
W
0.4
K
/W
0.
5
K/
W
0.6
K/
W
0 .8
K/W
1 K
/W
1.4
K /W
1.8 K
/W
R
=
0.
0
8
K
/W
-
D
e
lta
R
th
SA
0
20
40
60
80
100
120
140
160
180
200
220
0
20
40
60
80
100 120 140 160
180
120
90
60
30
RM S Lim it
Co nd uc tio n A ng le
M
a
x
imu
m
A
v
e
ra
g
e
F
o
rw
a
rd
P
o
w
e
rL
o
ss
(W
)
A ve ra g e Forw ard C urre n t (A )
SD 150N/R Se rie s
T = 180 C
J
20
40
60
80
100 120 140
160
180
M axim um A llo w ab le Am bien t Te m p era ture ( C )
1 .8 K /W
1 .4 K
/W
1 K
/W
0 .8
K/W
0. 6
K/W
0 .5
K/W
0.4
K/
W
0 .3
K
/W
0
.2
K/
W
R
=
0.0
8
K/
W
-
D
e
lta
R
th
SA
0
50
100
150
200
250
300
0
50
100
150
200
250
DC
180
120
90
60
30
RM S Lim it
C ond uc tion P eriod
M
a
x
im
u
m
A
v
e
ra
g
e
F
o
rw
a
rd
P
o
w
e
rL
o
ss
(
W
)
A vera g e Fo rw ard C urren t (A)
SD 150N/R Se ries
T = 180 C
J
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