参数资料
型号: SD203N25S320PBC
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: 整流器
英文描述: 200 A, 2500 V, SILICON, RECTIFIER DIODE, DO-205AB
封装: ROHS COMPLIANT, CERAMIC, DO-9, 1 PIN
文件页数: 5/9页
文件大小: 219K
代理商: SD203N25S320PBC
Document Number: 93170
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 08-Apr-08
5
SD203N/R Series
Fast Recovery Diodes
(Stud Version), 200 A
Vishay High Power Products
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 9 - Typical Forward Recovery Characteristics
Fig. 10 - Recovery Time Characteristics
Fig. 11 - Recovery Charge Characteristics
100
1000
10000
.5
2.5
4.5
6.5
In
st
an
ta
n
e
o
u
sF
o
rw
a
rd
C
u
rr
e
n
t(
A
)
InstantaneousForward Voltage (V)
SD203N/ RSeries
T = 25 °C
T = 125 °C
J
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
th
J
C
Tr
a
n
si
en
tT
h
e
rm
a
lI
m
pe
dance
Z
(K
/W
)
SD203N/ RSeries
Steady State Value:
R
= 0.115 K/ W
(DC Operation)
thJC
0
20
40
60
80
100
120
0
200
400
600
800
1000
1200
1400
1600
1800
2000
F
o
rw
a
rd
R
e
c
o
v
e
ry
(
V
)
Rate Off Fall Of Forward Current di/ dt (A/ usec)
T = 125°C
T = 25°C
J
SD203N/ R..S20 Series
I
V
FP
1.6
1.8
2
2.2
2.4
2.6
2.8
0
1
0
1
Ra te Of Fa ll Of Forwa rd Current - d i/ d t (A/s)
M
a
x
im
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
Ti
m
e
-
T
rr
(
s)
400 A
200 A
I
= 750 A
Sq ua re Pulse
FM
SD203N/ R..S10 Series
T = 125 °C, V = 30V
J
r
10
20
30
40
50
60
70
80
90
100
110
120
130
140
0
20406080
100
Ma
x
im
u
m
R
e
ve
rs
e
R
e
c
o
ve
ry
C
h
a
rg
e
-
Q
rr
(
C
)
Ra te Of Fall Of Forwa rd Current - di/ dt (A/ s)
400 A
200 A
I
= 750 A
Squa re Pulse
FM
SD203N/ R..S10 Series
T = 125 °C, V = 30V
J
r
相关PDF资料
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SD203R16S20P 200 A, 1600 V, SILICON, RECTIFIER DIODE, DO-205AB
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