参数资料
型号: SD203N25S320PBC
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: 整流器
英文描述: 200 A, 2500 V, SILICON, RECTIFIER DIODE, DO-205AB
封装: ROHS COMPLIANT, CERAMIC, DO-9, 1 PIN
文件页数: 7/9页
文件大小: 219K
代理商: SD203N25S320PBC
Document Number: 93170
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 08-Apr-08
7
SD203N/R Series
Fast Recovery Diodes
(Stud Version), 200 A
Vishay High Power Products
Fig. 18 - Recovery Current Characteristics
Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 20 - Maximum Total Energy Loss Per Pulse Characteristics
20
30
40
50
60
70
80
90
100
110
120
130
10 20 30 40 50 60 70 80 90 100
M
a
x
im
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
u
rr
e
n
t
-
Irr
(A
)
Ra te Of Fa ll Of Forward Current - di/ d t (A/ s)
400 A
200 A
I
= 750 A
Sq ua re Pulse
FM
SD203N/ R..S20 Series
T = 125 °C, V = 30V
J
r
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
1
4
2
0.1
0.2
0.4
0.02
0.04
Pulse Basewidth (s)
20 joules p er p ulse
0.01
P
e
a
k
F
o
rw
ar
d
C
u
rr
e
n
t
(A
)
Sinusoidal Pulse
10
dv/ dt = 1000V/ s
SD203N/ R..S10 Series
T = 125°C, V
= 1120V
RRM
J
1E1
1E2
1E3
1E4
1
2
0.2
0.4
Pulse Basewidth (s)
10
20 joulesper pulse
4
0.1
0.06
SD203N/ R..S10 Series
Trapezoidal Pulse
T = 125°C, V
= 1120V
RRM
dv/ dt=1000V/ s, di/ dt=50A/ s
J
tp
1E1
1E2
1E3
1E4
1E11E2
1E31E4
1
4
2
0.1
0.2
0.4
0.02
0.04
Pulse Basewidth (s)
20 joules per p ulse
0.01
P
e
ak
F
o
rw
a
rd
C
u
rr
e
n
t(
A
)
Sinusoidal Pulse
10
dv/ dt = 1000V/ s
SD203N/ R..S15 Series
T = 125°C, V
= 1120V
J
RRM
tp
1E1
1E2
1E3
1E4
1
2
0.2
0.4
Pulse Basewidth (s)
10
20 joules per pulse
4
0.1
SD203N/ R..S15 Series
Trapezoidal Pulse
T = 125°C, V
= 1120V
d v/ dt=1000V/ s, di/ dt=50A/ s
J
RRM
tp
相关PDF资料
PDF描述
SD203R16S20P 200 A, 1600 V, SILICON, RECTIFIER DIODE, DO-205AB
SD203R08S20P 200 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AB
SD203R04S10P 200 A, 400 V, SILICON, RECTIFIER DIODE, DO-205AB
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