参数资料
型号: SD233R36S50PSC
厂商: Vishay Semiconductors
文件页数: 2/3页
文件大小: 0K
描述: DIODE FAST REC 3600V 235A B-8
标准包装: 6
二极管类型: 标准
电压 - (Vr)(最大): 3600V(3.6kV)
电流 - 平均整流 (Io): 235A
电压 - 在 If 时为正向 (Vf)(最大): 3.2V @ 1000A
速度: 标准恢复 >500ns,> 200mA(Io)
反向恢复时间(trr): 5µs
电流 - 在 Vr 时反向漏电: 50mA @ 3600V
安装类型: 底座,接线柱安装
封装/外壳: B-8
供应商设备封装: B-8
包装: 散装
其它名称: *SD233R36S50PSC
SD233N/R Series
Bulletin |2094 rev. B 10/06
lniemoiionoiIEER Rectifier
ELECTRICAL SPECIFICATIONSVoltage Ratings
Voltage
Type number Code
V
max. repetitive VRSM , maximum non- IRRM max.
peak and off-state voltage336
repetitive peakvoltage TJ = 125°C
mA
40
45
Forward Conduction
Parameter
lF(AV) Max. average forward current
@ Case temperature
180° conduction, half sine wave.
@ 45°C case temperature
IHRMS) Max. RMS current
IFSM
Max. peak, one-cycle
non?repetitive forward current
Sinusoidal half wave,
Maximum i2t for fusing
initial TJ = TJ max.
50% VRRM
reapplied
l2\it Maximum i2\lt for fusing
t: 0.1 to ioms, no voltage reapplied
VHTO)‘ Low level of threshold voltage
VF(TO)2 High level of threshold voltage
r? Low level of forward slope resistance
(16.7% xnx IF(AV) < I < at x |F(AV)). TJ = TJ max.(I >Trx|F(AV)), TJ=TJ max.
(16.7% xnx IF(AV) < I < at x |F(AV)). TJ = TJ max.
r? High level of forward slope resistance2
(I > n x IF(AV)), TJ = TJ max.
VFM Max. forward voltage
Recovery Characteristics
lpk: 1000A, TJ =125°C,tp = 400 ps square pulse
IpkSquare Pulse
(A)
(~) di/at = 25A/us @ TJ = 25°c
www.irf.com
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