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参数资料
| 型号： | SD303C12S15C |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 350 A, 1200 V, SILICON, RECTIFIER DIODE, DO-200AA |
| 封装： | CERAMIC, PUK-2 |
| 文件页数： | 4/11页 |
| 文件大小： | 269K |
| 代理商： | SD303C12S15C |
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 93174
2
Revision: 04-Aug-08
SD303C..C Series
Vishay High Power Products
Fast Recovery Diodes
(Hockey PUK Version), 350 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ = 125 °C
mA
SD303C..S10C
04
400
500
35
08
800
900
10
1000
1100
SD303C..S15C
12
1200
1300
14
1400
1500
16
1600
1700
SD303C..S20C
20
2000
2100
25
2500
2600
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
at heatsink temperature
IF(AV)
180° conduction, half sine wave
Double side (single side) cooled
350 (175)
A
55 (75)
°C
Maximum RMS current
IF(RMS)
25 °C heatsink temperature double side cooled
550
A
Maximum peak, one-cycle ,
non-repetitive forward current
IFSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
5770
t = 8.3 ms
6040
t = 10 ms
100 % VRRM
reapplied
4850
t = 8.3 ms
5080
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
166
kA2s
t = 8.3 ms
152
t = 10 ms
100 % VRRM
reapplied
117
t = 8.3 ms
107
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
1660
kA2
√s
Low level value of threshold voltage
VF(TO)1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ maximum
1.14
V
High level value of threshold voltage
VF(TO)2
(I >
π x I
F(AV)), TJ = TJ maximum
1.63
Low level of forward slope resistance
rf1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ maximum
1.14
m
Ω
High level of forward slope resistance
rf2
(I >
π x I
F(AV)), TJ = TJ maximum
0.77
Maximum forward voltage drop
VFM
Ipk = 1100 A, TJ = 25 °C; tp = 10 ms sinusoidal wave
2.26
V
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT TJ = 25 °C
TEST CONDITIONS
TYPICAL VALUES
AT TJ = 125 °C
trr AT 25 % IRRM
(s)
Ipk
SQUARE
PULSE
(A)
dI/dt
(A/s)
Vr
(V)
trr AT 25 % IRRM
(s)
Qrr
(C)
Irr
(A)
S10
1.0
750
25
- 30
2.4
52
33
S15
1.5
2.9
90
44
S20
2.0
3.2
107
46
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t
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相关代理商/技术参数 |
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|---|---|
| SD303C12S20C | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Fast Recovery Diodes (Hockey PUK Version), 350 A |
| SD303C14S10C | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Fast Recovery Diodes (Hockey PUK Version), 350 A |
| SD303C14S15 | 制造商:IRF 制造商全称:International Rectifier 功能描述:FAST RECOVERY DIODES Hockey Puk Version |
| SD303C14S15C | 功能描述:DIODE FAST REC 1400V 350A A-PUK RoHS:是 类别:半导体模块 >> 二极管，整流器 系列:- 标准包装:10 系列:- 电压 - 在 If 时为正向 (Vf)（最大）:1.45V @ 30A 电流 - 在 Vr 时反向漏电:15µA @ 400V 电流 - 平均整流 (Io)（每个二极管）:30A 电压 - (Vr)（最大）:400V 反向恢复时间(trr):65ns 二极管类型:标准 速度:快速恢复 = 200mA（Io） 二极管配置:2 个独立式 安装类型:底座安装 封装/外壳:ISOTOP 供应商设备封装:ISOTOP? 包装:管件 |
| SD303C14S20C | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Fast Recovery Diodes (Hockey PUK Version), 350 A |
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