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参数资料
| 型号： | SD853C45S50K |
| 元件分类： | 整流器 |
| 英文描述： | 990 A, 4500 V, SILICON, RECTIFIER DIODE, DO-200AC |
| 封装： | KPUK-2 |
| 文件页数： | 6/7页 |
| 文件大小： | 128K |
| 代理商： | SD853C45S50K |
SD853C..S50K Series
6
Bulletin I2093 rev. C 04/00
www.irf.com
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristic
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 12 - Recovery Time Characteristics
Fig. 13 - Recovery Charge Characteristics
Fig. 14 - Recovery Current Characteristics
100
1000
10000
12
3456789
T = 25 °C
J
Instantan eous Forw ard V oltage (V)
In
st
a
n
ta
n
e
o
u
sF
o
rw
a
rd
C
u
rre
n
t
(A
)
T = 12 5°C
J
SD8 53C ..S5 0K Ser ies
0 . 00 01
0. 00 1
0. 0 1
0. 1
0. 00 1
0 . 0 1
0 . 1
1
1 0
1 00
Sq u are W a v e P u lse D u rat io n ( s)
th
J-
h
s
Tr
a
n
si
e
n
t
Th
e
rm
a
lI
m
p
e
d
a
n
c
e
Z
(
K
/
W
)
St e a d y S ta t e V a lu e
R
= 0 . 0 4 K / W
( Sin g le S id e C o o led )
R
= 0 . 0 2 K / W
( D ou b le S id e C o ole d )
(D C O p e ra t io n )
th J -hs
thJ -h s
S D 853C . . S50K Se rie s
0
50
10 0
15 0
20 0
25 0
30 0
0
2 0 0
40 0
6 00
8 0 0
1 00 0
1 200
1 400
1 6 0 0
1 8 0 0
20 00
Fo
rw
a
rd
R
e
c
o
v
e
ry
(
V
)
T = 1 2 5 °C
T = 2 5 °C
J
SD 853C .. S50K Se rie s
Ra te O f Rise O f Fo rw a rd C urr e n t - d i/d t ( A /u s)
I
V
FP
0
10 0
20 0
30 0
40 0
50 0
60 0
70 0
80 0
0
5 0
1 00 1 5 0 2 00 25 0 300
M
a
xi
m
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
u
rr
e
n
t-
I
rr
(A
)
500 A
Ra t e O f Fall O f Fo rward C urre nt - di/d t (A/s)
I
= 150 0 A
Sine Puls e
10 00 A
FM
S D 853C ..S 50K S e ries
T = 125 °C ; V > 10 0V
J
r
0
200
400
600
800
10 00
12 00
14 00
16 00
18 00
20 00
22 00
0
5 0
100 150 2 0 0 2 50 3 0 0
M
a
xi
m
u
m
R
e
ve
rs
e
R
e
c
o
ve
ry
C
h
a
rg
e
-
Q
rr
(
C
)
R a te O f Fa ll O f Fo rw ard C urre nt - di/d t (A /s)
500 A
I
= 15 00 A
Sine Puls e
1000 A
FM
S D 853 C ..S 50K Se rie s
T = 125 °C ; V > 100V
J
r
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
10 .5
1 0
10 0
100 0
Ra te O f Fall O f Forwa rd C urre nt - di/d t (A/s)
M
a
x
im
u
m
Re
v
e
rs
e
Re
c
o
v
e
ry
Ti
m
e
-
T
rr
(
s)
50 0 A
I
= 1 50 0 A
Sine Pulse
1 000 A
FM
SD 8 53C ..S 50K S e rie s
T = 125 °C ; V > 100V
J
r
Fig. 11 - Typical Forward Recovery Characteristics
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