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参数资料
| 型号： | SDP8406-003 |
| 元件分类： | 光敏三极管 |
| 英文描述： | PHOTO TRANSISTOR DETECTOR |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 1/4页 |
| 文件大小： | 458K |
| 代理商： | SDP8406-003 |
Silicon Phototransistor
SDP8406
DESCRIPTION
FEATURES
Side-looking plastic package
50 (nominal) acceptance angle
Wide sensitivity ranges
Mechanically and spectrally matched to
SEP8506 and SEP8706 infrared emitting diodes
The SDP8406 is an NPN silicon phototransistor molded
in a side-looking clear plastic package. The chip is
positioned to accept radiation through a plastic lens
from the side of the package.
DIM_017.ds4
INFRA-21.TIF
OUTLINE DIMENSIONS in inches (mm)
3 plc decimals
±0.005(0.12)
Tolerance
2 plc decimals
±0.020(0.51)
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
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相关PDF资料 |
PDF描述 |
|---|---|
| SDP8406-002 | PHOTO TRANSISTOR DETECTOR |
| SDP8406-004 | PHOTO TRANSISTOR DETECTOR |
| SDP8436-001 | PHOTO TRANSISTOR DETECTOR |
| SE1003-C | 4.8 mm, 1 ELEMENT, INFRARED LED, 950 nm |
| SE1003 | 4.8 mm, 1 ELEMENT, INFRARED LED, 950 nm |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SDP8406-003 | 制造商:Honeywell Sensing and Control 功能描述:PHOTOTRANSISTOR |
| SDP8406-004 | 功能描述:光电晶体管 Silicon PhotoTransis RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| SDP8406-139 | 功能描述:光电晶体管 INFRARED SENSORS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| SDP8406-3 | 制造商:Honeywell Sensing and Control 功能描述:PHOTOTRANSISTOR SIDE VIEW 制造商:Honeywell Sensing and Control 功能描述:PHOTOTRANSISTOR, SIDE VIEW 制造商:Honeywell Sensing and Control 功能描述:PHOTOTRANSISTOR, SIDE VIEW; Transistor Polarity:NPN; Power Consumption:100mW; Viewing Angle:50; No. of Pins:2 ;RoHS Compliant: Yes |
| SDP8406-3 | 制造商:Honeywell Sensing and Control 功能描述:PHOTOTRANSISTOR SIDE VIEW |
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