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参数资料
| 型号： | SDR6004MTXV |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 整流器 |
| 英文描述： | 45 A, 400 V, SILICON, RECTIFIER DIODE, TO-254AA |
| 封装： | HERMETIC SEALED, TO-254, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 142K |
| 代理商： | SDR6004MTXV |
PRELIMINARY
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SDR60 __ __ __ __
│
└ Screening2/
_ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
│
└ Package
M = TO-254
Z = TO-254Z
N = TO-258
P = TO-259
│
└ Configuration n/a (single diode)
└ Voltage
04 = 400 V
05 = 500 V
06 = 600 V
SDR6006 series
60Apk 60nsec
400 to 600 V
Ultrafast Rectifier
Features:
Ultrafast Recovery: 100nsec Maximum
High Surge Rating
Low Reverse Leakage Current
Low Junction Capacitance
Hermetically Sealed, Isolated Package
providing enhanced thermal performance
Eutectic Die Attach
TX, TXV, and S Level Screening iaw MIL-
PRF-19500 Available
hyperfast version available (typ 30 ns)
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse Voltage
SDR6004
SDR6005
SDR6006
VRRM
400
500
600
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TC = 100 °C)
Io
60
Amps, pk
Continuous Rectified Forward Current
(TC = 25 °C; limited by construction)
IF
45
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C, 1 pulse)
IFSM
500
Amps
Operating & Storage Temperature
TOP & TSTG
-65 to +200
C
Maximum Total Thermal Resistance
Junction to Case
RθJC
1.0
(0.7 typ)
C/W
TO-254 (M)
TO-254Z (Z)
TO-258
TO-259
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0121A
DOC
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