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参数资料
| 型号： | SDR6006Z |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 整流器 |
| 英文描述： | 45 A, 600 V, SILICON, RECTIFIER DIODE, TO-254 |
| 封装： | HERMETIC SEALED, TO-254Z, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 142K |
| 代理商： | SDR6006Z |
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR6006 Series
Electrical Characteristic
Symbol
Min
Typ
Max
Units
Instantaneous Forward Voltage Drop
(TA = 25C, 300 – 500 μsec Pulse)
IF = 10A
IF = 20A
IF = 40A
IF = 60A
VF1
VF2
VF3
VF4
––
915
1015
1170
1275
980
1100
1250
1400
mVDC
Instantaneous Forward Voltage Drop
(TA = 125C, 300 – 500 μsec Pulse)
IF = 10A
IF = 20A
IF = 40A
IF = 60A
VF5
VF6
VF7
VF8
––
765
870
1040
1150
-
1150
-
mVDC
Instantaneous Forward Voltage Drop
(TA = -55C, 300 – 500 μsec Pulse)
IF = 10A
IF = 20A
IF = 40A
IF = 60A
VF9
VF10
VF11
VF12
––
1000
1100
1250
1340
-
1350
-
mVDC
Reverse Leakage Current
(100% of rated VR, 300 μs pulse min.)
TA = 25 C
TA = 100 C
TA = 125 C
TA = 150 C
IR1
IR2
IR3
IR4
––
––
10
1
3
10
50
-
10
-
μA
mA
Reverse Recovery Time
(I
F = 0.5A, IR = 1A, IRR = 0.25A, TA = 25C)
tRR
––
60
100
nsec
Junction Capacitance
(VR = 10VDC, TA = 25C, f = 1MHz)
CJ
––
160
240
pF
NOTES: 1/ For Ordering Information, Price, and Availability Contact Factory.
2/
Screened to MIL-PRF-19500.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0121A
DOC
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|---|---|
| SDR6006NS | 45 A, 600 V, SILICON, RECTIFIER DIODE, TO-258AA |
| SDR6005P | 45 A, 500 V, SILICON, RECTIFIER DIODE, TO-259 |
| SDR6006ZTX | 45 A, 600 V, SILICON, RECTIFIER DIODE, TO-254 |
| SDR6004MTXV | 45 A, 400 V, SILICON, RECTIFIER DIODE, TO-254AA |
| SDR6005PTXV | 45 A, 500 V, SILICON, RECTIFIER DIODE, TO-259 |
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