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参数资料
| 型号： | SDR9510PDBTXV |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 50 A, 1000 V, SILICON, RECTIFIER DIODE, TO-259 |
| 封装： | HERMETIC SEALED, TO-259, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 102K |
| 代理商： | SDR9510PDBTXV |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0113C
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR958 thru SDR9512
Series
Electrical Characteristics3/
Symbol
Typ
Max
Units
Instantaneous Forward Voltage Drop
(TA = 25C, 300 μsec pulse)
IF = 20Adc
IF = 50Adc
IF = 100Adc
VF1
1.10
1.25
1.40
--
1.7
2.0
Volts
Instantaneous Forward Voltage Drop
TA = -55C
TA = 100C
IF = 20Adc
IF = 50Adc
IF = 20Adc
IF = 50Adc
VF2
1.20
1.30
0.95
1.15
--
1.80
--
1.60
Volts
Reverse Leakage Current
(Rated VR, TA = 25C, 300 μsec pulse minimum)
IR1
50
100
μA
Reverse Leakage Current
(Rated VR, TA = 100C, 300 μsec pulse minimum)
(Rated VR, TA = 125C, 300 μsec pulse minimum)
(Rated VR, TA = 150C, 300 μsec pulse minimum)
IR2
3.0
7.0
17.0
10
--
mA
Junction Capacitance
(VR = 5 Vdc, TA = 25C, f = 1MHz)
(VR = 10 Vdc, TA = 25C, f = 1MHz)
CJ
180
160
--
250
pF
Reverse Recovery Time
(IF = 500 mA, IR = 1A, IRR = 0.25A)
(IF = 10 A, dIF /dt = 100A/us)
(IF = 10 A, dIF /dt = 45A/us)
TA = 25C
TA = 100C
trr1
trr2
IRM2
trr3
IRM3
trr4
IRM4
100
135
8.0
210
4.0
330
7.5
150
--
nsec
A
nsec
A
nsec
A
Case Outline: TO-258 (N)
Case Outline: TO-259 (P)
Lead Forming Options:
Suffix DB:
Suffix UB:
Pin1: Cathode
Pin2: Anode
Pin3: Anode
.270
.240
.045
.035
.145
.135
.750
.500
2x .150
.120
.290
.275
2x
.265
.245
.135
.120
TYP
.550
.530
2x
.265
.245
3x
.065
.055
2x
.205
.195
.405
.395
1.215
1.175
.960
.935
.700
.680
1.300
1.030
PIN 1
PIN 2
PIN 3
PI
N
1
PI
N
2
PI
N
3
2x
.270
.240
.190 MIN
2x .270
.240
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