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参数资料
| 型号： | SE5470-003 |
| 元件分类： | 红外LED |
| 英文描述： | 3.77 mm, 1 ELEMENT, INFRARED LED, 880 nm |
| 文件页数： | 1/4页 |
| 文件大小： | 475K |
| 代理商： | SE5470-003 |
AlGaAs Infrared Emitting Diode
SE3470/5470
DESCRIPTION
FEATURES
TO-46 metal can package
Choice of flat window or lensed package
90 or 20 (nominal) beam angle option
880 nm wavelength
Higher output power than GaAs at equivalent
drive currents
Wide operating temperature range
(- 55C to +125C)
Ideal for high pulsed current applications
Mechanically and spectrally matched to
SD3421/5421 photodiode,
SD3443/5443/5491phototransistor,
SD3410/5410 photodarlington and SD5600
series Schmitt trigger
The SE3470/5470 series consists of aluminum gallium
arsenide infrared emitting diode mounted in a TO-46
metal can package. The SE3470 series has flat window
cans providing a wide beam angle, while the SE5470
series has glass lensed cans providing a narrow beam
angle. These devices typically exhibit 70% greater
power output than gallium arsenide devices at the same
forward current. The TO-46 packages offer high power
dissipation capability and are ideally suited for operation
in hostile environments.
INFRA-83.TIF
OUTLINE DIMENSIONS in inches (mm)
3 plc decimals
±0.005(0.12)
Tolerance
2 plc decimals
±0.020(0.51)
2. ANODE
1. CATHODE (TAB)
LEADS:
.046(1.17)
.036(.91)
2
1
DIA.
(.460)
.018
MIN.
(12.70)
.500
(0.36)
.015
.140 (3.56)
.153 (3.89)
DIA.
.137 (3.48)
.160 (4.06)
.188 (4.77)
.178 (4.52)
DIA.
.208 (5.28)
.219 (5.56)
.100(2.54)DIA
NOM
45°
.048(1.22)
.028(.71)
(CASE)
DIM_005a.ds4
SE3470
2. ANODE (CASE)
1. CATHODE (TAB)
LEADS:
.046(1.17)
.036(.91)
2
1
DIA.
(.460)
.018
MIN.
(12.70)
.500
(0.36)
.015
5.08
.200
DIA.
.137 (3.48)
.160 (4.06)
.188 (4.77)
.178 (4.52)
DIA.
.208 (5.28)
.219 (5.56)
.100(2.54)DIA
NOM
45°
.048(1.22)
.028(.71)
.224 (5.89)
.247 (6.27)
DIM_005b.ds4
SE5470
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
32
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SE5470-003 | 制造商:Honeywell Sensing and Control 功能描述:IR Emitting Diode |
| SE5470-004 | 功能描述:红外发射源 AlGaAs Emiting Diode TO-46 Metal Can Pkg RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| SE5470-004 | 制造商:Honeywell Sensing and Control 功能描述:IR EMITTING DIODE |
| SE5470-004-JAB | 制造商:Honeywell Sensing and Control 功能描述:Infrared Sensors |
| SE5470-121 | 制造商:Honeywell Sensing and Control 功能描述:INFRARED SENSORS |
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