参数资料
型号: SE5470-003
元件分类: 红外LED
英文描述: 3.77 mm, 1 ELEMENT, INFRARED LED, 880 nm
文件页数: 2/4页
文件大小: 475K
代理商: SE5470-003
AlGaAs Infrared Emitting Diode
SE3470/5470
ELECTRICAL CHARACTERISTICS
UNITS
TEST CONDITIONS
MIN
PARAMETER
SYMBOL
TYP
MAX
ABSOLUTE MAXIMUM RATINGS
(25C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
100 mA
Peak Forward Current
3 A
(1s pulse width, 300 pps)
Power Dissipation
150 mW []
Operating Temperature Range
-55C to 125C
Storage Temperature Range
-65C to 150C
Soldering Temperature (10 sec)
260C
Notes
1. Derate linearly from 25C free-air temperature at the rate of
1.43 mW/C.
SCHEMATIC
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
33
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相关代理商/技术参数
参数描述
SE5470-003 制造商:Honeywell Sensing and Control 功能描述:IR Emitting Diode
SE5470-004 功能描述:红外发射源 AlGaAs Emiting Diode TO-46 Metal Can Pkg RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
SE5470-004 制造商:Honeywell Sensing and Control 功能描述:IR EMITTING DIODE
SE5470-004-JAB 制造商:Honeywell Sensing and Control 功能描述:Infrared Sensors
SE5470-121 制造商:Honeywell Sensing and Control 功能描述:INFRARED SENSORS