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参数资料
| 型号： | SFC05-5.TC |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 200 W, UNIDIRECTIONAL, 5 ELEMENT, SILICON, TVS DIODE, MO-211BB |
| 封装： | FLIP CHIP, CSP-6 |
| 文件页数： | 3/7页 |
| 文件大小： | 619K |
| 代理商： | SFC05-5.TC |
3
2003 Semtech Corp.
www.semtech.com
PRELIMINARY
PROTECTION PRODUCTS
SFC05-5
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
Power Derating Curve
0
10
20
30
40
50
60
70
80
90
100
110
0
25
50
75
100
125
150
Ambient Temperature - TA (
oC)
%
of
Rated
Power
or
I
PP
Clamping Voltage vs. Peak Pulse Current
0
10
20
30
40
50
60
70
80
90
100
110
0
5
10
15
20
25
30
Time (s)
P
e
rcen
to
f
I PP
e
-t
td = IPP/2
Waveform
Parameters:
tr = 8s
td = 20s
Pulse Waveform
ESD Clamping (8kV Contact Discharge)
0.01
0.1
1
10
0.1
1
10
100
1000
Pulse Duration - tp (s)
P
e
ak
Pu
lse
P
o
w
e
r-
P
pk
(k
W
)
0.00
1.00
2.00
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
0
5
10
15
20
25
Peak Pulse Current - IPP (A)
Cl
am
p
in
g
V
o
lt
ag
e
-
V
c
(V
)
Waveform
Parameters:
tr = 8s
td = 20s
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