参数资料
型号: SFH6315T
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: 光电耦合器
英文描述: 1 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 1 Mbps
封装: SOIC-8
文件页数: 1/5页
文件大小: 458K
代理商: SFH6315T
Document Number: 83677
www.vishay.com
Revision 17-August-01
2–277
FEATURES
Surface Mountable
Industry Standard SOIC-8 Footprint
Compatible with Infrared Vapor Phase Reow and
Wave Soldering Processes
Isolation Voltage, 3000 VRMS
Very High Common Mode Transient Immunity:
15000 V/
s at VCM=1500 V Guaranteed (SFH6343)
High Speed: 1.0 Mb/s
TTL Compatible
Guaranteed AC and DC Performance Over
Temperature: 0
°C to 70°C
Open Collector Output
Pin Compatible with HP Optocouplers
SFH6315T—HCPL0500
SFH6316T—HCPL0501
SFH6343T—HCPL0453
VDE 0884 Available with Option 1
APPLICATIONS
Line Receivers
Logic Ground Isolation
Analog Signal Ground Isolation
Replace Pulse Transformers
DESCRIPTION
The SFH6315T/16T/43T, high speed optocouplers, each
consists of a GaAlAs infrared emitting diode, optically
coupled with an integrated photodetector and a high
speed transistor. The photodetector is junction isolated
from the transistor to reduce miller capacitance effects.
The open collector output function allows circuit designers
to adjust the load conditions when interfacing with differ-
ent logic systems such as TTL, CMOS, etc.
Because the SFH6343T has a Faraday shield on the
detector chip, it can also reject and minimize high input to
output common mode transient voltages. There is no base
connection, further reducing the potential electrical noise
entering the package.
The SFH6315T/16T/43T are packaged in industry stan-
dard SOIC-8 packages and are suitable for surface
mounting.
V
DE
SFH6315T/SFH6316T/SFH6343T
High Speed Optocoupler
Absolute Maximum Ratings
Emitter (GaAlAs)
Reverse Voltage......................................................................... 3.0 V
DC Forward Current................................................................. 25 mA
Surge Forward Current (tp≤1.0 s, 300 pulses/s)......................1.0 A
Total Power Dissipation (TA≤70°C) ......................................... 45 mW
Detector (Si Photodiode + Transistor)
Supply Voltage................................................................ –0.5 to 30 V
Output Voltage.............................................................. –0.5V to 25 V
Output Current ........................................................................ 8.0 mA
Total Power Dissipation (TA≤70°C) ....................................... 100 mW
Package
Isolation Test Voltage
between emitter and detector.......................................3000 VRMS
(refer to climate DIN 40046, part 2, Nov. 74)
Pollution Degree (DIN VDE 0110).................................................... 2
Creepage.............................................................................
≥4.0 mm
Clearance ............................................................................
≥4.0 mm
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part 1 .......................................... 175
Isolation Resistance
VIO=500 V, TA=25°C, RISOL (Note 2) ................................. ≥10
12
VIO=500 V, TA=100°C, RISOL(Note 2) ................................ ≥10
11
Storage Temperature Range .................................. –55
°C to +150°C
Ambient Temperature Range.................................. –55
°C to +100°C
Junction Temperature .............................................................. 100
°C
Soldering Temperature (t=10 s max.)
Dip soldering: distance to seating plane
≥1.5 mm .............. 260°C
40
°
Lead
Coplanarity
±.0015 (.04)
max.
.015
±.002
(.38
±.05)
.008 (.20)
7
°
.058
±.005
(1.49
±.13)
.125
±.005
(3.18
±.13)
.050 (1.27) typ.
.192
±.005
(4.88
±.13)
.004 (.10)
.008 (.20)
.021 (.53)
5
° max.
R.010
(.25) max.
.020
±.004
(.51
±.10)
2 plcs.
1
2
3
4
8
7
6
5
V
CC
NC
C
E
NC
A
K
NC
1
2
3
4
8
7
6
5
V
CC
Base V
B
C
E
NC
A
K
NC
SFH6315/6
SFH6343
.240
(6.10)
.154
±.002
(3.91
±.05)
.016
(.41)
Pin 1
.120
±.002
(3.05
±.05)
CL
TOLERANCE: ±.005 (unless otherwise noted)
Package Dimensions in Inches (mm)
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