参数资料
型号: SG3626R
厂商: MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP
元件分类: MOSFETs
英文描述: DUAL HIGH SPEED DRIVER
中文描述: 3 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, MBFM5
封装: METAL CAN, TO-66, 5 PIN
文件页数: 3/8页
文件大小: 148K
代理商: SG3626R
9/91 Rev 1.1 2/94
Copyright
1994
L
IN
F
IN
ITY
Microelectronics Inc.
11861 Western Avenue
Garden Grove, CA 92841
(714) 898-8121
FAX: (714) 893-2570
3
SG1626/SG2626/SG3626
ELECTRICAL CHARACTERISTICS
(continued)
C
L
= 1000pF
(Note 5)
C
L
= 2500pF
C
L
= 1000pF
(Note 5)
C
L
= 2500pF
C
L
= 1000pF
(Note 5)
C
L
= 2500pF
C
L
= 1000pF
(Note 5)
C
L
= 2500pF
C
L
= 2500pF, Freq. = 200KHz
Duty Cycle = 50%
Dynamic Characteristics
(Note 6)
Propagation Delay High-Low
(TPHL)
Propagation Delay Low-High
(TPLH)
Rise Time (TTLH)
Fall Time (TTHL)
Supply Current (I
CC
)
(both outputs)
Min.
Typ. Max.
Min.
Typ. Max.
18
25
25
35
30
40
20
40
35
17
25
30
30
30
SG1626
T
=-55
°
C to 125
°
C
Test Conditions
(Figure 1)
Parameter
AC TEST CIRCUIT AND SWITCHING TIME WAVEFORMS - FIGURE 1
FIGURE 4.
TRANSITION TIMES VS. AMBIENT TEMPERATURE
FIGURE 3.
PROPAGATION DELAY VS. SUPPLY VOLTAGE
FIGURE 2.
TRANSITION TIMES VS. SUPPLY VOLTAGE
CHARACTERISTIC CURVES
SG1626/2626/3626
T
A
= 25
°
C
Units
SG1626
ns
ns
ns
ns
ns
ns
ns
ns
mA
30
40
40
50
35
50
30
50
40
Note 5. These parameters, specified at 1000pF, although guaranteed over recommended operating conditions, are not 100% tested in produc-
tion.
Note 6. V
CC
= 15V.
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