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参数资料
| 型号： | SGB35UFTX |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 0.06 A, SILICON, SIGNAL DIODE |
| 封装： | HERMETIC SEALED PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 159K |
| 代理商： | SGB35UFTX |
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
SGB ___
UF
___
└
Screening 7/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
│
└
Recovery Time
UF = Ultra Fast
│
└
Voltage/Family
10 = 1000V
15 = 1500V
20 = 2000V
25 = 2500V
30 = 3000V
35 = 3500 V
SGB10UF
and
SGB35UF
60 mA
1000 ─ 3500 VOLTS
60 nsec
HIGH VOLTAGE
RECTIFIER
FEATURES:
Ultra Fast Recovery: 60nsec Maximum
PIV to 3500 Volts
Hermetically Sealed
Void-Free Construction
Metallurgically Bonded
175°C Maximum Operating Temperature
Micro Miniature Package
TX, TXV, and Space Level Screening
Available7/
ELECTRICAL CHARACTERISTICS
Part
Number
Peak
Inverse
Voltage
Average
Rectifier
Current
Maximum
Reverse
Current
Maximu
m
Forward
Voltage
Maximum
Surge
Current
(1 Cycle)
Maximum
Reverse
Recovery
Time
Maximum
Junction
Capacitance
Typical
Thermal
Impedance
Symbol
PIV
I0
IR @ PIV
VF 2/
IFSM
tRR 5/
CJ
θJL
Units
Volts
mA
μA
Volts
Amps
nsec
pF
°C/W
Conditions
25°C
100°C
25°C
100°C
25°C
VR = 100V
fT = 1MHZ
L = 1/4"
SGB10UF
1000
60
45
0.1
10
9.5
5
60
1.0
185
SGB15UF
1500
60
45
0.1
10
9.5
5
60
1.0
185
SGB20UF
2000
60
45
0.1
10
9.5
5
60
1.0
185
SGB25UF
2500
60
45
0.1
10
9.5
5
60
1.0
185
SGB30UF
3000
60
45
0.1
10
9.5
5
60
1.0
185
SGB35UF
3500
60
45
0.1
10
9.5
5
60
1.0
185
NOTES:
1. Operating and testing over 10,000 V/inch may require encapsulation or immersion in suitable dielectric
material.
2. IF = I0; Maximum forward voltage measured with instantaneous forward pulse of 300msec minimum.
3. Maximum lead temperature for soldering is 250oC, 3/8" from case for 5 sec maximum.
4. Operating and Storage temperature: -65 to +175oC.
5. Reverse Recovery Test Conditions: IF = 50mA, IR = 100mA, IRR = 25mA, TA = 25oC.
6. Consult manufacturing for operating curves.
7. Screening based on MIL-PRF-19500. Screening flows available on request.
Axial
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RV0003F
DOC
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SGB-4333 | 制造商:RF Micro Devices Inc 功能描述:IC AMP HBT SIGE 3GHZ 16-QFN |
| SGB-4333Z | 制造商:SIRENZA 制造商全称:SIRENZA 功能描述:DC - 3 GHz Active Bias Gain Block |
| SGB-4533 | 制造商:RF Micro Devices Inc 功能描述:IC AMP HBT SIGE 3GHZ 16-QFN |
| SGB-4533Z | 制造商:SIRENZA 制造商全称:SIRENZA 功能描述:DC - 3 GHz Active Bias Gain Block |
| SGB-6433 | 制造商:RF Micro Devices Inc 功能描述:IC AMP HBT SIGE 3.5GHZ 16-QFN |
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