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参数资料
| 型号： | SGB35UFTX |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 0.06 A, SILICON, SIGNAL DIODE |
| 封装： | HERMETIC SEALED PACKAGE-2 |
| 文件页数： | 2/2页 |
| 文件大小： | 159K |
| 代理商： | SGB35UFTX |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RV0003F
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SGB10UF
and
SGB35UF
PACKAGE OUTLINE: AXIAL RECTIFIER
DIMENSIONS
DIM
MIN
MAX
A
--
.150”
B
--
.090”
C
1.00”
--
D
.022”
.028”
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SGB-4333 | 制造商:RF Micro Devices Inc 功能描述:IC AMP HBT SIGE 3GHZ 16-QFN |
| SGB-4333Z | 制造商:SIRENZA 制造商全称:SIRENZA 功能描述:DC - 3 GHz Active Bias Gain Block |
| SGB-4533 | 制造商:RF Micro Devices Inc 功能描述:IC AMP HBT SIGE 3GHZ 16-QFN |
| SGB-4533Z | 制造商:SIRENZA 制造商全称:SIRENZA 功能描述:DC - 3 GHz Active Bias Gain Block |
| SGB-6433 | 制造商:RF Micro Devices Inc 功能描述:IC AMP HBT SIGE 3.5GHZ 16-QFN |
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