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| 型号： | SGL50N60RUFDTU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | IGBT 80A 600V W/DIODE TO-264 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | FGL, SGL TO-264 Pkg |
| 标准包装： | 25 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.8V @ 15V，50A |
| 电流 - 集电极 (Ic)（最大）： | 80A |
| 功率 - 最大： | 250W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-264-3，TO-264AA |
| 供应商设备封装： | TO-264 |
| 包装： | 管件 |
| 产品目录页面： | 1610 (CN2011-ZH PDF) |
November 2013
SGL50N60RUFD
600 V, 50 A Short Circuit Rated IGBT
General Description
Features
Fairchild’s RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
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50 A, 600 V, T C = 100°C
Low Saturation Voltage: V CE (sat) = 2.2 V @ I C = 50 A
Typical Fall Time. . . . . . . . . .261ns at T J = 125°C
High Speed Switching
High Input Impedance
Short Circuit Rating
Applications
Motor Control, UPS, General Inverter.
C
G
G
C
E
TO-264
E
Absolute Maximum Ratings
T C = 25 ? C unless otherwise noted
Symbol
Description
Ratings
Unit
V CES
V GES
I C
I CM (1)
I F
I FM
T SC
P D
T J
T stg
T L
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T C = 25 ? C
@ T C = 100 ? C
@ T C = 25 ? C
@ T C = 100 ? C
@ T C = 100 ? C
@ T C = 25 ? C
@ T C = 100 ? C
600
? 20
80
50
150
60
30
90
10
250
100
-55 to +150
-55 to +150
300
V
V
A
A
A
A
A
A
us
W
W
? C
? C
? C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R ? JC (IGBT)
R ? JC (DIODE)
R ? JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.5
1.0
25
Unit
? C / W
? C / W
? C / W
?1999 Fairchild Semiconductor Corporation
SGL50N60RUFD Rev. C1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SGL50N60RUFTU | 功能描述:IGBT 晶体管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| SGL5N150UF | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:General Description |
| SGL5N150UFTU | 功能描述:IGBT 晶体管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| SGL5N60RUFDTU | 功能描述:IGBT 晶体管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| SGL60N90D | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:IGBT CO-PAK (High Speed Switching Low Saturation Voltage High Input Impedance) |
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