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参数资料
| 型号： | SGP23N60UFDTU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | IGBT W/DIODE 600V TO-220 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.6V @ 15V，12A |
| 电流 - 集电极 (Ic)（最大）： | 23A |
| 功率 - 最大： | 100W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
IGBT
SGP23N60UFD
Ultra-Fast IGBT
General Description
Features
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
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High speed switching
Low saturation voltage : V CE(sat) = 2.1 V @ I C = 12A
High input impedance
CO-PAK, IGBT with FRD : t rr = 42ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
GCE
TO-220
E
Absolute Maximum Ratings
T C = 25 ° C unless otherwise noted
Symbol
Description
SGP23N60UFD
Units
V CES
V GES
I C
I CM (1)
I F
I FM
P D
T J
T stg
T L
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T C = 25 ° C
@ T C = 100 ° C
@ T C = 100 ° C
@ T C = 25 ° C
@ T C = 100 ° C
600
± 20
23
12
92
12
92
100
40
-55 to +150
-55 to +150
300
V
V
A
A
A
A
A
W
W
° C
° C
° C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R θ JC (IGBT)
R θ JC (DIODE)
R θ JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
1.2
2.5
62.5
Units
° C / W
° C / W
° C / W
?2002 Fairchild Semiconductor Corporation
SGP23N60UFD Rev. A1
相关PDF资料 |
PDF描述 |
|---|---|
| SGP23N60UFTU | IGBT W/DIODE 600V TO-220-3 |
| SGPD.12A | EVAL KIT GPS SGP.12A ANTENNA |
| SGPD.15A | EVAL KIT GPS SGP.15A ANTENNA |
| SGPD.18C | EVALUATION KIT FOR SGP.18C |
| SGPD.25C | EVAL KIT FOR SGP.25C |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SGP23N60UFTU | 功能描述:IGBT 晶体管 Dis High Perf IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| SGP2-500-BS | 制造商:Banner Engineering 功能描述:SGP2-500-BS PAIR 2 BM GRD W/PIGTAILS 500mm EZ SCREEN |
| SGP2-500-BS20 | 制造商:Banner Engineering 功能描述:SGP2-500-BS20 PR 2 BM GRD W/PIGTAILS 500mm EZ SCREEN |
| SGP2-584 | 制造商:Banner Engineering 功能描述:SAFETY, SGP2-584 PAIR 2 BM GRD 584MM EZ SCREEN |
| SGP2-584Q88E | 制造商:Banner Engineering 功能描述:LIGHT SCREEN; SAFETY; EZ-SCREEN; 2 PNP, OSSD; 8 PIN EURO QD; RANGE .8-20MM |
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