参数资料
型号: SGP23N60UFDTU
厂商: Fairchild Semiconductor
文件页数: 4/8页
文件大小: 0K
描述: IGBT W/DIODE 600V TO-220
产品培训模块: High Voltage Switches for Power Processing
标准包装: 50
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.6V @ 15V,12A
电流 - 集电极 (Ic)(最大): 23A
功率 - 最大: 100W
输入类型: 标准
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220
包装: 管件
1200
Common Emitter
200
Common Emitter
1000
Cies
V GE = 0V, f = 1MHz
T C = 25 ℃
100
V CC = 300V, V GE = ± 15V
I C = 12A
T C = 25 ℃
Ton
T C = 125 ℃
800
600
400
Coes
Tr
200
0
Cres
10
1
10
30
1
10
100
200
Collector - Emitter Voltage, V CE [V]
Fig 7. Capacitance Characteristics
Gate Resistance, R G [ ? ]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
Common Emitter
V CC = 300V, V GE = ± 15V
I C = 12A
1000
T C = 25 ℃
T C = 125 ℃
Toff
Eoff
Eon
Eon
Tf
100
50
Toff
Tf
100
30
Eoff
Common Emitter
V CC = 300V, V GE = ± 15V
I C = 12A
T C = 25 ℃
T C = 125 ℃
1
10
100
200
1
10
100
200
Gate Resistance, R G [ ? ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
200
Common Emitter
Gate Resistance, R G [ ? ]
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
100
V CC = 300V, V GE = ± 15V
R G = 23 ?
T C = 25 ℃
T C = 125 ℃
V CC = 300V, V GE = ± 15V
R G = 23 ?
T C = 25 ℃
T C = 125 ℃
Toff
Tf
Ton
Toff
100
10
Tr
50
Tf
4
8
12
16
20
24
4
8
12
16
20
24
Collector Current, I C [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
?2002 Fairchild Semiconductor Corporation
Collector Current, I C [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGP23N60UFD Rev. A1
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