参数资料
型号: SGP23N60UFDTU
厂商: Fairchild Semiconductor
文件页数: 3/8页
文件大小: 0K
描述: IGBT W/DIODE 600V TO-220
产品培训模块: High Voltage Switches for Power Processing
标准包装: 50
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.6V @ 15V,12A
电流 - 集电极 (Ic)(最大): 23A
功率 - 最大: 100W
输入类型: 标准
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220
包装: 管件
100
50
80
Common Emitter
T C = 25 ℃
20V
15V
40
Common Emitter
V GE = 15V
T C = 25 ℃
T C = 125 ℃
60
40
20
0
12V
V GE = 10V
30
20
10
0
0
2
4
6
8
0.5
1
10
Collector - Emitter Voltage, V CE [V]
Fig 1. Typical Output Characteristics
Collector - Emitter Voltage, V CE [V]
Fig 2. Typical Saturation Voltage
Characteristics
4
3
2
Common Emitter
V GE = 15V
24A
12A
20
15
10
V CC = 300V
Load Current : peak of square wave
I C = 6A
1
5
Duty cycle : 50%
T C = 100 ℃
0
0
Power Dissipation = 21W
0
30
60
90
120
150
0.1
1
10
100
1000
Case Temperature, T C [ ℃ ]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Common Emitter
T C = 25 ℃
16
12
8
Frequency [KHz]
Fig 4. Load Current vs. Frequency
20
Common Emitter
T C = 125 ℃
16
12
8
4
12A
24A
4
12A
24A
0
I C = 6A
0
I C = 6A
0
4
8
12
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. V GE
?2002 Fairchild Semiconductor Corporation
Gate - Emitter Voltage, V GE [V]
Fig 6. Saturation Voltage vs. V GE
SGP23N60UFD Rev. A1
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