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参数资料
| 型号： | SGW23N60UFDTM |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 中文描述： | 23 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封装： | D2PAK-3 |
| 文件页数： | 1/10页 |
| 文件大小： | 618K |
| 代理商： | SGW23N60UFDTM |
2002 Fairchild Semiconductor Corporation
SGW23N60UFD Rev. A1
IGBT
S
G
W23N60UFD
SGW23N60UFD
Ultra-Fast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
High speed switching
Low saturation voltage : VCE(sat) = 2.1 V @ IC = 12A
High input impedance
CO-PAK, IGBT with FRD : trr = 42ns (typ.)
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
Symbol
Description
SGW23N60UFD
Units
VCES
Collector-Emitter Voltage
600
V
VGES
Gate-Emitter Voltage
± 20
V
IC
Collector Current
@ TC = 25°C23
A
Collector Current
@ TC = 100°C12
A
ICM (1)
Pulsed Collector Current
92
A
IF
Diode Continuous Forward Current
@ TC = 100°C12
A
IFM
Diode Maximum Forward Current
92
A
PD
Maximum Power Dissipation
@ TC = 25°C
100
W
Maximum Power Dissipation
@ TC = 100°C40
W
TJ
Operating Junction Temperature
-55 to +150
°C
Tstg
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
300
°C
Symbol
Parameter
Typ.
Max.
Units
RθJC(IGBT)
Thermal Resistance, Junction-to-Case
--
1.2
°C/W
RθJC(DIODE)
Thermal Resistance, Junction-to-Case
--
2.5
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient (PCB Mount) (2)
--
40
°C/W
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
G
E
C
D2-PAK
G
C
E
G
C
E
相关PDF资料 |
PDF描述 |
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| SGW5N60RUFDTM | |
| SH2 | 20 A, 100 V, SILICON, SIGNAL DIODE |
| SH3 | 20 A, 200 V, SILICON, SIGNAL DIODE |
| SH8K2TB | 6 A, 30 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET |
| SHC-21-001 | 0.75 mm2, BRASS, WIRE TERMINAL |
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| SGW23N60UFTM | 功能描述:IGBT 晶体管 600V/12A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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| SGW25N120E8161 | 功能描述:IGBT 晶体管 FAST IGBT NPT TECH 1200V 25A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| SGW25N120FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 46A 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 46A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 1200V 46A 313W TO247-3 |
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