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参数资料
| 型号： | SH8K2TB |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 30 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SOP-8 |
| 文件页数： | 1/4页 |
| 文件大小： | 169K |
| 代理商： | SH8K2TB |
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2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
4V Drive Nch+Nch MOSFET
SH8K2
Structure
Dimensions (Unit : mm)
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small surface Mount Package (SOP8).
Application
Power switching, DC / DC converter.
Packaging specifications
Inner circuit
Package
Code
Taping
Basic ordering unit (pieces)
SH8K2
TB
2500
Type
Absolute maximum ratings (Ta=25
C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
V
VDSS
Symbol
V
VGSS
A
ID
A
IDP
A
IS
A
ISP
W
PD
°C
Tch
°C
Tstg
Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Continuous
Pulsed
Continuous
Source current
(Body diode)
Pulsed
30
±20
±6.0
±24
1.6
6.4
2
150
55 to +150
Limits
1
2
1 Pw 10μs, Duty cycle 1%
2 MOUNTED ON A CERAMIC BOARD.
Thermal resistance
°C / W
Rth (ch-a)
62.5
Parameter
Symbol
Limits
Unit
Channel to ambient
MOUNTED ON A CERAMIC BOARD.
Each lead has same dimensions
SOP8
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) (2) (3) (4)
(8) (7) (6) (5)
2
1
2
1
(8)
(7)
(1)
(2)
(6)
(5)
(3)
(4)
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SH8K2TB1 | 功能描述:MOSFET Nch+Nch 30V 6A MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SH8K3 | 制造商:ROHM 制造商全称:Rohm 功能描述:4V Drive Nch+Nch MOSFET |
| SH8K32 | 制造商:ROHM 制造商全称:Rohm 功能描述:4V Drive Nch+Nch MOSFET |
| SH8K32TB | 制造商:ROHM Semiconductor 功能描述: |
| SH8K32TB1 | 功能描述:MOSFET Nch+Nch 60V 4.5A MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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