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参数资料
| 型号： | SH8K2TB |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 30 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SOP-8 |
| 文件页数： | 2/4页 |
| 文件大小： | 169K |
| 代理商： | SH8K2TB |
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c
2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
Data Sheet
SH8K2
Electrical characteristics (Ta=25
C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Symbol
IGSS
Yfs
Min.
Typ.
Max.
Unit
Conditions
Gate-source leakage
V(BR) DSS
Drain-source breakdown voltage
IDSS
Zero gate voltage drain current
VGS (th)
Gate threshold voltage
Static drain-source on-state
resistance
RDS (on)
Forward transfer admittance
Input capacitance
Output capacitance
Ciss
Reverse transfer capacitance
Coss
Turn-on delay time
Crss
Rise time
td (on)
Turn-off delay time
tr
Fall time
td (off)
Total gate charge
tf
Gate-source charge
Qg
Gate-drain charge
Qgs
Qgd
Pulsed
±10
μAVGS=±20V, VDS=0V
VDD 15V
30
VID
=1mA, VGS=0V
1
μAVDS=30V, VGS=0V
1.0
2.5
V
VDS
=10V, ID=1mA
21
30
ID
=6.0A, VGS=10V
30
42
m
Ω ID=6.0A, VGS=4.5V
33
47
ID
=6.0A, VGS=4V
4.0
SID
=6.0A, VDS=10V
520
pF
VDS
=10V
150
95
pF
VGS
=0V
9
pF
f
=1MHz
VGS
=10V
RL
=5Ω
RG
=10Ω
21
ns
36
ns
13
ns
7.2
ns
1.8
10.1
nC
2.8
nC
VGS
=5V
nC
ID
=6.0A
ID
=3A, VDD 15V
Body diode characteristics (Source-Drain) (Ta=25
C)
<It is the same characteristics for the Tr1 and Tr2.>
Forward voltage
VSD
1.2
V
IS
=6.4A, VGS=0V
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Pulsed
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相关代理商/技术参数 |
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