参数资料
型号: SH8K2TB
元件分类: JFETs
英文描述: 6 A, 30 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: SOP-8
文件页数: 3/4页
文件大小: 169K
代理商: SH8K2TB
3/3
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
Data Sheet
SH8K2
Electrical characteristic curves
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS (V)
10
CAPACITANCE
:
C
(pF)
1000
10000
100
Ta
=25°C
f
=1MHz
VGS
=0V
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Ciss
Coss
Crss
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
1
10
100
1000
DRAIN CURRENT : ID (A)
SWITCHING
TIME
:
t
(ns)
Ta
=25°C
VDD
=15V
VGS
=10V
RG
=10Ω
Pulsed
Fig.2 Switching Characteristics
tr
tf
td (off)
td (on)
02468
10
12
14
TOTAL GATE CHARGE : Qg (nC)
0
1
2
3
4
5
6
7
8
9
10
GATE-SOURCE
VOLTAGE
:
V
GS
(V)
Ta
=25°C
VDD
=15V
ID
=6A
RG
=10Ω
Pulsed
Fig.3 Dynamic Input Characteristics
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.001
0.01
0.1
1
10
GATE-SOURCE VOLTAGE : VGS (V)
DRAIN
CURRENT
:
I
D
(A)
Fig.4 Typical Transfer Characteristics
Ta
= 25°C
Ta
=25°C
Ta
=75°C
Ta
=125°C
VDS
=10V
Pulsed
02468
10
12
14
16
GATE-SOURCE VOLTAGE : VGS (V)
0
50
100
150
200
STATIC
DRAIN-SOURCE
ON-STATE
RESISTANCE
:
R
DS
(on)
(
m
Ω
)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Ta
=25°C
Pulsed
ID
=6A
ID
=3A
0.01
0.1
1
10
0.0
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
SOURCE
CURRENT
:
I
s
(A)
Fig.6 Source Current vs.
Source-Drain Voltage
VGS
=0V
Pulsed
Ta
= 25°C
Ta
=25°C
Ta
=75°C
Ta
=125°C
0.1
1
10
DRAIN CURRENT : ID (A)
1
10
100
1000
STATIC
DRAIN-SOURCE
ON-STATE
RESISTANCE
:
R
DS
(on)
(
m
Ω
)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (
Ι)
Ta
= 25°C
Ta
=25°C
Ta
=75°C
Ta
=125°C
VGS
=10V
Pulsed
0.1
1
10
1
10
100
1000
DRAIN CURRENT : ID (A)
Ta
= 25°C
Ta
=25°C
Ta
=75°C
Ta
=125°C
VGS
=4.5V
Pulsed
STATIC
DRAIN-SOURCE
ON-STATE
RESISTANCE
:
R
DS
(on)
(
m
Ω
)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (
ΙΙ)
0.1
1
10
1
10
100
1000
VGS
=4V
Pulsed
Ta
= 25°C
Ta
=25°C
Ta
=75°C
Ta
=125°C
DRAIN CURRENT : ID (A)
STATIC
DRAIN-SOURCE
ON-STATE
RESISTANCE
:
R
DS
(on)
(
m
Ω
)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (
ΙΙΙ)
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