参数资料
型号: SI1867DL-T1-E3
厂商: Vishay Siliconix
文件页数: 2/10页
文件大小: 0K
描述: IC LOAD SW LVL SHIFT 1.2A SC70-6
标准包装: 3,000
类型: 高端开关
输出数: 1
Rds(开): 1.2 欧姆
内部开关:
电流限制: 600mA
输入电压: 1.8 V ~ 8 V
安装类型: 表面贴装
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商设备封装: SC-70-6
包装: 带卷 (TR)
Si1867DL
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM
Si1 8 67DL
SC70-6
Top V ie w
4
2, 3
R 2
1
6
R 1 , C 1
Marking Code
S 2
Q2
D 2
D 2
2
5
O N /OFF
V B
XX
Lot Tracea b ility
and Date Code
6
R 1 , C 1
D 2
3
4
S 2
Part # Code
O N /OFF
5
Q1
Orderin g Information: Si1 8 67DL-T1-E3 (Lead (P b )-free)
Si1 8 67DL-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
R 2
1
Parameter
Input Voltage
ON/OFF Voltage
Symbol
V IN
V ON/OFF
Limit
8
8
Unit
V
Load Current
Continuous Intrinsic Diode Conduction
a
Continuous a, b
Pulsed b, c
I L
I S
± 0.6
±3
- 0.4
A
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
ESD Rating, MIL-STD-833D Human Body Model (100 pF, 1500 Ω )
P D
T J , T stg
ESD
0.4
- 55 to 150
2
W
°C
kV
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (Continuous Current) a
Maximum Junction-to-Foot (Q2)
Symbol
R thJA
R thJF
Typical
260
190
Maximum
320
230
Unit
°C/W
SPECIFICATIONS T J = 25 °C unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
OFF Characteristics
Reverse Leakage Current
I FL
V IN = 8 V, V ON/OFF = 0 V
1
μ A
Diode Forward Voltage
V SD
l S = - 0.4 A
0.85
1.1
V
ON Characteristics
Input Voltage
V IN
V ON/OFF = 1.5 , V IN = 4.5 V, I D = 0.6 A
1.8
0.480
8
0.600
V
On-Resistance (P-Channel) at 1 A
R DS(on)
V ON/OFF = 1.5 , V IN = 2.5 V, I D = 0.5 A
0.690
0.850
Ω
V ON/OFF = 1.5 , V IN = 1.8 V, I D = 0.2 A
0.950
1.200
On-State (P-Channel) Drain-Current
I D(on)
V IN-OUT ≤ 0.2 V, V IN = 5 V, V ON/OFF = 1.5 V
V IN-OUT ≤ 0.3 V, V IN = 3 V, V ON/OFF = 1.5 V
1
1
A
Notes:
a) Surface mounted on FR4 board.
b) V IN = 8 V, V ON/OFF = 8 V, T A = 25 °C.
c) Pulse test; pulse width ≤ 300 μ s, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72534
S10-0792-Rev. D, 05-Apr-10
相关PDF资料
PDF描述
LGU2W181MELZ CAP ALUM 180UF 450V 20% SNAP
VI-J5W-EY CONVERTER MOD DC/DC 5.5V 50W
RCM10DTAH-S189 CONN EDGECARD 20POS R/A .156 SLD
UVR1J682MRD CAP ALUM 6800UF 63V 20% RADIAL
RSA06DRMI-S288 CONN EDGECARD 12POS .125 EXTEND
相关代理商/技术参数
参数描述
SI1867DL-T1-GE3 功能描述:IC LOAD SW LEVEL SHIFTER SC-70-6 RoHS:是 类别:集成电路 (IC) >> PMIC - 电源分配开关 系列:- 特色产品:XRP252 Switches 标准包装:1 系列:- 类型:高端开关 输出数:2 Rds(开):140 毫欧 内部开关:是 电流限制:1.15A 输入电压:1.75 V ~ 5.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:10-WFDFN 裸露焊盘 供应商设备封装:10-TDFN(3x3) 包装:Digi-Reel® 其它名称:1016-1691-6
SI1869DH 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Load Switch with Level-Shift
SI1869DH-T1-E3 功能描述:MOSFET LOAD SWITCH 1.8V RA W/ LEVEL SHIFT RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI1869DH-T1-GE3 功能描述:MOSFET LOAD SWITCH 1.8V RA W/ LEVEL SHIFT RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI1900DL 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET