- 您现在的位置：买卖IC网 > PDF目录368615 > SI3483DV (Vishay Intertechnology,Inc.) P-Channel 30-V (D-S) MOSFET to switch white LED's; PDF资料下载
参数资料
| 型号： | SI3483DV |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 30-V (D-S) MOSFET to switch white LED's; |
| 中文描述： | P通道30V（D-S）MOSFET用于开关白光LED |
| 文件页数： | 2/5页 |
| 文件大小： | 66K |
| 代理商： | SI3483DV |
Si3483DV
Vishay Siliconix
www.vishay.com
2
Document Number: 72078
S-40238—Rev. B, 16-Feb-04
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
250 A
1.0
3
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
30 V, V
GS
= 0 V
1
A
V
DS
=
30 V, V
GS
= 0 V, T
J
= 85 C
5
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
=
10 V
25
A
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
10 V, I
D
=
6.2 A
0.028
0.035
V
GS
=
4.5 V, I
D
=
5.0 A
0.042
0.053
Forward Transconductance
a
g
fs
V
DS
=
15
V, I
D
=
6.2 A
14
S
Diode Forward Voltage
a
V
SD
I
S
=
1.7 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
23
35
Gate-Source Charge
Q
gs
V
DS
=
15 V,
V
GS
=
10 V, I
D
=
6.2 A
3.6
nC
Gate-Drain Charge
Q
gd
6
Turn-On Delay Time
t
d(on)
10
15
Rise Time
t
r
V
=
15 V, R
= 15
1 A, V
GEN
=
10 V, R
g
= 6
10
15
Turn-Off Delay Time
t
d(off)
I
D
71
110
ns
Fall Time
t
f
45
70
Source-Drain Reverse Recovery Time
t
rr
I
F
=
1.7 A, di/dt = 100 A/ s
45
70
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
5
10
15
20
25
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
5
10
15
20
25
0
1
2
3
4
5
V
GS
= 10 thru 5 V
T
C
= 125 C
55 C
4 V
25 C
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
3 V
相关PDF资料 |
PDF描述 |
|---|---|
| SI3483DV-T1-E3 | P-Channel 30-V (D-S) MOSFET |
| SI3586DV | P-Channel 20-V (D-S) MOSFET,Low-Threshold |
| SI3590DV | N- and P-Channel 30-V (D-S) MOSFET |
| SI3863DV | AB 47C 1#12 46#16 PIN RECP |
| SI3905DV | Dual P-Channel 8-V (D-S) MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI3483DV-T1 | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET P-CH 30V 4.7A 6-Pin TSOP T/R |
| SI3483DV-T1-E3 | 功能描述:MOSFET 30V 6.2A 2.0W 35mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI3483DV-T1-GE3 | 功能描述:MOSFET 30V 6.2A 2.0W 35mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI3493BDV | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
| SI3493BDV-T1-E3 | 功能描述:MOSFET 20V 8.0A 2.97W 27.5mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。