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参数资料
| 型号： | SI3590DV |
| 厂商： | Vishay Intertechnology,Inc. |
| 元件分类： | MOSFETs |
| 英文描述： | N- and P-Channel 30-V (D-S) MOSFET |
| 中文描述： | N和P沟道30V的（D-S）MOSFET |
| 文件页数： | 1/8页 |
| 文件大小： | 64K |
| 代理商： | SI3590DV |
FEATURES
TrenchFET Power MOSFET
Ultra Low r
DS(on)
N- and P-Channel for High
Efficiency
Optimized for High-Side/Low-Side
Minimized Conduction Losses
APPLICATIONS
Portable Devices Including PDAs, Cellular
Phones and Pagers
Si3590DV
Vishay Siliconix
New Product
Document Number: 72032
S-21979—Rev. A, 04-Nov-02
www.vishay.com
1
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.077 @ V
GS
= 4.5 V
3
N-Channel
30
0.120 @ V
GS
= 2.5 V
2
0.170 @ V
GS
= -4.5 V
-2
P-Channel
-30
0.300 @ V
GS
= -2.5 V
-1.2
D
1
G
1
S
1
N-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
D2
G2
S1
S2
D1
G1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol
10 secs
Steady State
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
-30
Gate-Source Voltage
V
GS
12
12
V
T
A
= 25 C
3
2.5
- 2
-1.7
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 70 C
I
D
2.3
2.0
-1.6
-1.3
Pulsed Drain Current
I
DM
8
-8
A
Continuous Source Current (Diode Conduction)
a
I
S
1.05
0.75
-1.05
-0.75
T
A
= 25 C
1.15
0.83
1.15
0.83
Maximum Power Dissipation
a
T
A
= 70 C
P
D
0.70
0.53
0.70
0.53
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ
Max
Typ
Max
Unit
t
10 sec
93
110
93
110
Maximum Junction-to-Ambient
a
Steady State
R
thJA
130
150
130
150
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
75
90
75
90
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI3590DV_06 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N- and P-Channel 30-V (D-S) MOSFET |
| SI3590DV_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N- and P-Channel 30-V (D-S) MOSFET |
| SI3590DV_09 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N- and P-Channel 30-V (D-S) MOSFET |
| SI3590DV-T1 | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R |
| SI3590DV-T1-E3 | 功能描述:MOSFET N&P-CH 30V (D-S) RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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